Saturated Ferromagnetism and Magnetization Deficit in Optimally Annealed (Ga,Mn)As Epilayers
arXiv:cond-mat/0204250 · doi:10.1103/PhysRevB.66.012408
Abstract
We examine the Mn concentration dependence of the electronic and magnetic properties of optimally annealed Ga1-xMnxAs epilayers for 1.35% < x < 8.3%. The Curie temperature (Tc), conductivity, and exchange energy increase with Mn concentration up to x ~ 0.05, but are almost constant for larger x, with Tc ~ 110 K. The ferromagnetic moment per Mn ion decreases monotonically with increasing x, implying that an increasing fraction of the Mn spins do not participate in the ferromagnetism. By contrast, the derived domain wall thickness, an important parameter for device design, remains surprisingly constant.
8 pages, 4 figures, submitted for Rapid Communication in Phys Rev B
References in corpus (6)
- Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs
- Ferromagnetism in magnetically doped III-V semiconductors
- Transition temperature of ferromagnetic semiconductors: a dynamical mean field study
- Unipolar spin diodes and transistors
- Theory of Magnetic Properties and Spin-Wave Dispersion for Ferromagnetic (Ga,Mn)As
- Lattice constant variation and complex formation in zincblende Gallium Manganese Arsenide
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