Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors

Abstract

Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement is observed and explained in terms of positive charges trapped in the SiO2 gate oxide, during the irradiation. The transistor channel current is increased up to three order of magnitudes after the exposure to an irradiation dose of 100e-/nm2. Finally, a complete field emission characterization of the MoS2 flake, achieving emission stability for several hours and a minimum turn-on field of about 20 V/um with a field enhancement factor of about 500 at anode-cathode distance of 1.5um, demonstrates the suitability of few-layer MoS2 as two-dimensional emitting surface for cold-cathode applications.

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• Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors
• A WSe2 vertical field emission transistor
• Giant persistent photoconductivity in monolayer MoS2 field-effect transistors
• Gas dependent hysteresis in MoS${}_2$ field effect transistors
• Field emission in ultrathin PdSe2 back-gated transistors
• Environmental effects on the electrical characteristics of back-gated WSe2 field effect transistors
• Electron irradiation of metal contacts in monolayer MoS${}_2$ Field-Effect Transistors
• Field Emission Characterization of MoS2 Nanoflowers
• Electron irradiation on multilayer PdSe${}_2$ field effect transistors
• Field emission from two-dimensional GeAs
• Radiation-hardened and Repairable MoS${}_2$ Field Effect Devices with Polymer Solid Electrolyte Gates
• Vacuum gauge from ultrathin MoS2 transistor