activity
20052018
most citedAsymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

222 citations · 505 across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.mes-hall2018★ 222 cited

Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

Antonio Di Bartolomeo, Alessandro Grillo, Francesca Urban +8

We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized…

physics.app-ph2018★ 70 cited

Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors

Filippo Giubileo, Laura Iemmo, Maurizio Passacantando +6

Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to…

physics.app-ph2018★ 10 cited

Modeling of graphene Hall effect sensors for microbead detection

A. Manzin, E. Simonetto, G. Amato +2

This paper deals with the modeling of sensitivity of epitaxial graphene Hall bars, from sub-micrometer to micrometer size, to the stray field generated by a magnetic microbead. To…

cond-mat.mtrl-sci2016★ 41 cited

Direct fabrication of three-dimensional buried conductive channels in single crystal diamond with ion microbeam induced graphitization

P. Olivero, G. Amato, F. Bellotti +10

We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of impla…

cond-mat.mtrl-sci2016★ 20 cited

Direct fabrication and IV characterization of sub-surface conductive channels in diamond with MeV ion implantation

P. Olivero, G. Amato, F. Bellotti +4

In the present work we report about the investigation of the conduction mechanism of sp2 carbon micro-channels buried in single crystal diamond. The structures are fabricated with…

cond-mat.mtrl-sci2016

Low entropy in graphene through the Co-C system

Giampiero Amato, Federico Beccaria, Umberto Vignolo +1

Uniform, mostly single-layer graphene with enhanced stability is demonstrated over Co film. The polycrystalline Co film deposited on a SiO2/Si substrate gives a continuous graphene…