Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Abstract

Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio-frequency resonant circuit coupled via the gate. Differential capacitance changes at the inter-dot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau-Zener-St{ü}ckelberg-Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunnelling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, $T_2\approx 100$~ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing CMOS technology.

References in corpus (41)

• Polynomial-Time Algorithms for Prime Factorization and Discrete Logarithms on a Quantum Computer
• Quantum Mechanics helps in searching for a needle in a haystack
• Circuit Quantum Electrodynamics: Coherent Coupling of a Single Photon to a Cooper Pair Box
• An addressable quantum dot qubit with fault-tolerant control fidelity
• A Two Qubit Logic Gate in Silicon
• Landau-Zener-Stuckelberg interferometry
• Circuit Quantum Electrodynamics with a Spin Qubit
• Mach-Zehnder Interferometry in a Strongly Driven Superconducting Qubit
• A Semiconductor Nanowire-Based Superconducting Qubit
• Charge echo in a Cooper-pair box
• Quantum control and process tomography of a semiconductor quantum dot hybrid qubit
• Realization of microwave quantum circuits using hybrid superconducting-semiconducting nanowire Josephson elements
• Landau-Zener interferometry with superconducting qubits
• A coherent beam splitter for electronic spin states
• Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors
• A high-sensitivity gate-based charge sensor in silicon
• Coherence times of dressed states of a superconducting qubit under extreme driving
• Amplitude Spectroscopy of a Solid-State Artificial Atom
• Charge and spin state readout of a double quantum dot coupled to a resonator
• Observation of quantum capacitance in the Cooper-pair transistor
• Coherent Quasiclassical Dynamics of a Persistent Current Qubit
• Coherent Quantum Oscillations in a Silicon Charge Qubit
• Direct Observation of Josephson Capacitance
• Landau-Zener-Stuckelberg Interferometry of a Single Electron Charge Qubit
• Characterization of Qubit Dephasing by Landau-Zener Interferometry
• Relaxation of excited spin, orbital, and valley qubit states in single electron silicon quantum dots
• Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor
• Quantum Phase Tomography of a Strongly Driven Qubit
• A Radio Frequency Charge Parity Meter
• Stückelberg interference in a superconducting qubit under periodic latching modulation
• Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy
• Coherent Adiabatic Spin Control in the Presence of Charge Noise Using Tailored Pulses
• Cavity-Mediated Entanglement Generation Via Landau-Zener Interferometry
• Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors
• Charge dynamics and spin blockade in a hybrid double quantum dot in silicon
• Impedance of the single electron transistor at radio-frequencies
• Dynamic parity recovery in a strongly driven Cooper-pair box
• Impedance measurement technique for quantum systems
• Delayed-response quantum back-action in nanoelectromechanical systems
• Splitting a single Cooper-pair with microwave light
• Thermionic charge transport in CMOS nano-transistors

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• Floquet spectroscopy of a strongly driven quantum dot charge qubit with a microwave resonator
• A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
• Large dispersive interaction between a CMOS double quantum dot and microwave photons
• Landau-Zener-Stuckelberg-Majorana interferometry of a single hole
• Hole spin resonance and spin-orbit coupling in a silicon metal-oxide-semiconductor field-effect transistor
• Network architecture for a topological quantum computer in silicon
• Primary thermometry of a single reservoir using cyclic electron tunneling in a CMOS transistor
• A silicon-based single-electron interferometer coupled to a fermionic sea
• Quantum state readout of individual quantum dots by electrostatic force detection
• Quantum interferometry with a g-factor-tunable spin qubit
• Single-shot readout of a driven hybrid qubit in a GaAs double quantum dot
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• Charge noise and overdrive errors in reflectometry-based charge, spin and Majorana qubit readout
• Palladium gates for reproducible quantum dots in silicon
• Low-frequency spectroscopy for quantum multi-level systems
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• Conditional dispersive readout of a CMOS quantum dot via an integrated transistor circuit
• Probing two driven double quantum dots strongly coupled to a cavity
• Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor
• Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry
• Two-level systems with periodic $N$-step driving fields: Exact dynamics and quantum state manipulations
• Reconfigurable quadruple quantum dots in a silicon nanowire transistor
• Floquet state depletion in ac-driven circuit QED
• A quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry
• Coherent Charge Oscillations in a Bilayer Graphene Double Quantum Dot
• Non-galvanic calibration and operation of a quantum dot thermometer
• Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices
• Dissipative two-level systems under ultrastrong off-resonant driving
• Dispersive sensing in hybrid InAs/Al nanowires
• Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot
• Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots
• Democratizing Spin Qubits
• Automatic virtual voltage extraction of a 2x2 array of quantum dots with machine learning
• Theory of multi-dimensional quantum capacitance and its application to spin and charge discrimination in quantum-dot arrays
• Interferometry of multi-level systems: rate-equation approach for a charge qudit
• Spin-valley resolved photon-assisted tunneling in carbon nanotube double quantum dots
• Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor
• Flux-Tunable Hybridization in a Double Quantum Dot Interferometer
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• Emission spectrum of a qubit under its deep strong driving in the high-frequency dispersive regime
• Noninvasive and nonadiabatic quantum Maxwell demon
• Multipassage Landau-Zener tunneling oscillations in transverse/longitudinal dual dressing of atomic qubits
• Dissipative Rabi model for deep strong far-off-resonant driving
• Quantum Transport in 40-nm MOSFETs at Deep-Cryogenic Temperatures