Experimental Demonstration of XOR Operation in Graphene Magnetologic Gates at Room Temperature

Abstract

We report the experimental demonstration of a magnetologic gate built on graphene at room temperature. This magnetologic gate consists of three ferromagnetic electrodes contacting a single layer graphene spin channel and relies on spin injection and spin transport in the graphene. We utilize electrical bias tuning of spin injection to balance the inputs and achieve "exclusive or" (XOR) logic operation. Furthermore, simulation of the device performance shows that substantial improvement towards spintronic applications can be achieved by optimizing device parameters such as device dimensions. This advance holds promise as a basic building block for spin-based information processing.

arXiv comment23 pages, 4 figures

References in corpus (23)

• Spintronics: Fundamentals and applications
• Spin torque switching with the giant spin Hall effect of tantalum
• Electronic spin transport and spin precession in single graphene layers at room temperature
• Spin Transfer Torques
• Graphene Spintronics
• Ultrafast magnetization switching by spin-orbit torques
• Tunneling Spin Injection into Single Layer Graphene
• Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
• A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
• Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions
• Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
• Spin Transport and Relaxation in Graphene
• Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene
• Electrical Detection of Spin Precession in Single Layer Graphene Spin Valves with Transparent Contacts
• Spin-polarized Zener tunneling in (Ga,Mn)As
• Temperature dependent asymmetry of the nonlocal spin-injection resistance: evidence for spin non-conserving interface scattering
• Controlling the efficiency of spin injection into graphene by carrier drift
• Spin extraction theory and its relevance to spintronics
• Spin-polarized current amplification and spin injection in magnetic bipolar transistors
• Lateral diffusive spin transport in layered structures
• Spin transference and magnetoresistance amplification in a transistor
• Spin transport in graphene nanostructures
• Correlating spin transport and electrode magnetization in a graphene spin valve: simultaneous magnetic microscopy and non-local measurements

Cited by in corpus (27)

• Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit
• Van der Waals heterostructures for spintronics and opto-spintronics
• Colloquium: Spintronics in graphene and other two-dimensional materials
• Giant Spin Lifetime Anisotropy in Graphene Induced by Proximity Effects
• A two-dimensional spin field-effect transistor
• Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures
• What Makes Effective Gating Possible in Two-Dimensional Heterostructures?
• Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts
• Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
• Heterostructures of graphene and hBN: electronic, spin-orbit, and spin relaxation properties from first principles
• Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure
• Spin precession in anisotropic media
• Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
• Two-Dimensional Spintronic Circuit Architectures on Large Scale Graphene
• Multifunctional Spin Logic Gates In Graphene Spin Circuits
• Graphene on two-dimensional hexagonal BN, AlN, and GaN: Electronic, spin-orbit, and spin relaxation properties
• Universal transfer and stacking technique of van der Waals heterostructures for spintronics
• Probing Tunneling Spin Injection into Graphene via Bias Dependence
• Enhanced longevity of the spin helix in low-symmetry quantum wells
• Suppressing spin relaxation in silicon
• Modeling the Oblique Spin Precession in Lateral Spin Valves for Accurate Determination of Spin Lifetime Anisotropy: Effect of Finite Contact Resistance and Channel Length
• Giant and anisotropic enhancement of spin-charge conversion in double Rashba interface graphene-based quantum system
• Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature
• Carrier Drift Control of Spin Currents in Graphene-Based Spin-Current Demultiplexers
• Proximity-induced magnetization in graphene: Towards efficient spin gating
• Terahertz Spin-Light Coupling in Proximitized Dirac Materials
• Large spin signal and spin rectification in folded-bilayer graphene