Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2
arXiv:0807.4049 · doi:10.1021/nl802156w
Abstract
Raman spectra were measured for mono-, bi- and trilayer graphene grown on SiC by solid state graphitization, whereby the number of layers was pre-assigned by angle-resolved ultraviolet photoemission spectroscopy. It was found that the only unambiguous fingerprint in Raman spectroscopy to identify the number of layers for graphene on SiC(0001) is the linewidth of the 2D (or D*) peak. The Raman spectra of epitaxial graphene show significant differences as compared to micromechanically cleaved graphene obtained from highly oriented pyrolytic graphite crystals. The G peak is found to be blue-shifted. The 2D peak does not exhibit any obvious shoulder structures but it is much broader and almost resembles a single-peak even for multilayers. Flakes of epitaxial graphene were transferred from SiC onto SiO2 for further Raman studies. A comparison of the Raman data obtained for graphene on SiC with data for epitaxial graphene transferred to SiO2 reveals that the G peak blue-shift is clearly due to the SiC substrate. The broadened 2D peak however stems from the graphene structure itself and not from the substrate.
arXiv comment27 pages, 8 figures
References in corpus (20)
- Electric Field Effect in Atomically Thin Carbon Films
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Energy Band Gap Engineering of Graphene Nanoribbons
- The structure of suspended graphene sheets
- Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
- Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene
- Substrate-induced band gap opening in epitaxial graphene
- Raman scattering from high frequency phonons in supported n-graphene layer films
- Born-Oppenheimer Breakdown in Graphene
- Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene
- Epitaxial graphene
- Raman Fingerprint of Charged Impurities in Graphene
- Electronic structure of epitaxial graphene layers on SiC: effect of the substrate
- Raman spectroscopy of epitaxial graphene on a SiC substrate
- Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons
- Probing the Electronic Structure of Bilayer Graphene by Raman Scattering
- Few layer graphene on SiC, pyrolitic graphite and graphene: a Raman scattering study
- Raman imaging of doping domains in graphene on SiO2
- Morphology of graphene thin film growth on SiC(0001)
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- Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment
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- Towards a Graphene-Based Quantum Impedance Standard
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- Evidence for Interlayer Electronic Coupling in Multilayer Epitaxial Graphene from Polarization Dependent Coherently Controlled Photocurrent Generation
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- The role of graphitic filaments in resistive switching behaviour of amorphous silicon carbide thin films
- Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices