activity
20082012
most citedBand structure engineering of epitaxial graphene on SiC by molecular doping

416 citations · 797 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2012★ 100 cited

Breakdown of the interlayer coherence in twisted bilayer graphene

Youngwook Kim, Hoyeol Yun, Seung-Geol Nam +8

Coherent motion of the electrons in the Bloch states is one of the fundamental concepts of the charge conduction in solid state physics. In layered materials, however, such a condi…

cond-mat.mes-hall2012★ 39 cited

Transconductance fluctuations as a probe for interaction induced quantum Hall states in graphene

Dong Su Lee, Viera Skakalova, R. Thomas Weitz +2

Transport measurements normally provide a macroscopic, averaged view of the sample, so that disorder prevents the observation of fragile interaction induced states. Here, we demons…

cond-mat.mtrl-sci2010★ 242 cited

Electronic decoupling of an epitaxial graphene monolayer by gold intercalation

Isabella Gierz, Takayuki Suzuki, Dong Su Lee +7

The application of graphene in electronic devices requires large scale epitaxial growth. The presence of the substrate, however, usually reduces the charge carrier mobility conside…

cond-mat.mtrl-sci2009★ 416 cited

Band structure engineering of epitaxial graphene on SiC by molecular doping

Camilla Coletti, Christian Riedl, Dong Su Lee +5

Epitaxial graphene on SiC(0001) suffers from strong intrinsic n-type doping. We demonstrate that the excess negative charge can be fully compensated by non-covalently functionalizi…

cond-mat.mtrl-sci2008

Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2

Dong Su Lee, Christian Riedl, Benjamin Krauß +3

Raman spectra were measured for mono-, bi- and trilayer graphene grown on SiC by solid state graphitization, whereby the number of layers was pre-assigned by angle-resolved ultravi…