Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology

Abstract

We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1.33 \mum, with optical lifetimes of 163 ns and 43 ns. Group theory and ab initio density functional supercell calculations enable unequivocal site assignment and shed light on the spectral features of the defects. We conclude with a brief outlook on applications in quantum photonics.

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• Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide
• Multidimensional cluster states using a single spin-photon interface coupled strongly to an intrinsic nuclear register
• Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC
• Nuclear Spin Quantum Memory in Silicon Carbide
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• {\textit{Ab initio} determination of pseudospin for paramagnetic defects in SiC
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• Roadmap on Integrated Quantum Photonics
• Engineering chlorine-based emitters in silicon carbide for telecom-band quantum technologies
• Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC