activity
20042024
most citedCMOS-compatible graphene photodetector covering all optical communication bands

895 citations · 1.3k across the 16 of their papers we have counts for

collaborators

16 papers

cond-mat.mes-hall2024

All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy

Johannes Aberl, Enrique Prado Navarrete, Merve Karaman +12

Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC…

physics.optics2022★ 10 cited

Single SiGe Quantum Dot Emission Deterministically Enhanced in a High-Q Photonic Crystal Resonator

Thanavorn Poempool, Johannes Aberl, Marco Clementi +9

We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) a…

cond-mat.mes-hall2021★ 14 cited

Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots

Jeffrey Schuster, Johannes Aberl, Lada Vukušić +5

The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band ga…

physics.optics2020★ 21 cited

Selective tuning of optical modes in a silicon comb-like photonic crystal cavity

Marco Clementi, Andrea Barone, Thomas Fromherz +2

Realizing multiply resonant photonic crystal cavities with large free spectral range is key to achieve integrated devices with highly efficient nonlinear response, such as frequenc…

cond-mat.mes-hall2019★ 37 cited

Resolving the temporal evolution of line broadening in quantum emitters

Christian Schimpf, Marcus Reindl, Petr Klenovský +7

Light emission from solid-state quantum emitters is inherently prone to environmental decoherence, which results in an inhomogeneous line broadening and in the deterioration of pho…

quant-ph2019★ 81 cited

Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology

L. Spindlberger, A. Csóré, G. Thiering +7

We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1…