Single-shot single-gate RF spin readout in silicon

Abstract

For solid-state spin qubits, single-gate RF readout can help minimise the number of gates required for scale-up to many qubits since the readout sensor can integrate into the existing gates required to manipulate the qubits (Veldhorst 2017, Pakkiam 2018). However, a key requirement for a scalable quantum computer is that we must be capable of resolving the qubit state within single-shot, that is, a single measurement (DiVincenzo 2000). Here we demonstrate single-gate, single-shot readout of a singlet-triplet spin state in silicon, with an average readout fidelity of $82.9\%$ at a $3.3\text{kHz}$ measurement bandwidth. We use this technique to measure a triplet $T_{-}$ to singlet $S_0$ relaxation time of $0.62\text{ms}$ in precision donor quantum dots in silicon. We also show that the use of RF readout does not impact the maximum readout time at zero detuning limited by the $S_0$ to $T_{-}$ decay, which remained at approximately $2\text{ms}$. This establishes single-gate sensing as a viable readout method for spin qubits.

References in corpus (21)

• Quantum Computation with Quantum Dots
• Surface codes: Towards practical large-scale quantum computation
• Spins in few-electron quantum dots
• Silicon Quantum Electronics
• Roads towards fault-tolerant universal quantum computation
• Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
• A Coherent Spin-Photon Interface in Silicon
• Universal quantum computation with spin-1/2 pairs and Heisenberg exchange
• Silicon CMOS architecture for a spin-based quantum computer
• Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors
• Charge and spin state readout of a double quantum dot coupled to a resonator
• Minimal resonator loss for circuit quantum electrodynamics
• Frequency Multiplexing for Readout of Spin Qubits
• Radio-frequency capacitive gate-based sensing
• Two-Electron Spin Correlations in Precision Placed Donors in Silicon
• A Radio Frequency Charge Parity Meter
• Addressable electron spin resonance using donors and donor molecules in silicon
• Optimal post-processing for a generic single-shot qubit readout
• Charge State Hysteresis in Semiconductor Quantum Dots
• Single-charge detection by an atomic precision tunnel junction
• Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot

Cited by in corpus (43)

• Semiconductor Spin Qubits
• Semiconductor Quantum Computation
• Probing quantum devices with radio-frequency reflectometry
• Fast gate-based readout of silicon quantum dots using Josephson parametric amplification
• Rapid high-fidelity spin state readout in Si/SiGe quantum dots via radio-frequency reflectometry
• Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
• Repetitive quantum non-demolition measurement and soft decoding of a silicon spin qubit
• Large dispersive interaction between a CMOS double quantum dot and microwave photons
• Optimal dispersive readout of a spin qubit with a microwave resonator
• Rapid detection of coherent tunneling in an InAs nanowire quantum dot through dispersive gate sensing
• Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate
• CMOS Position-Based Charge Qubits: Theoretical Analysis of Control and Entanglement
• Hybrid superconductor-semiconductor systems for quantum technology
• Quantum device fine-tuning using unsupervised embedding learning
• Rapid microwave-only characterization and readout of quantum dots using multiplexed gigahertz-frequency resonators
• The impact of stochastic incorporation on atomic-precision Si:P arrays
• Small-signal equivalent circuit for double quantum dots at low-frequencies
• AlCl${}_3$-dosed Si(100)-2$\times$1: Adsorbates, chlorinated Al chains, and incorporated Al
• A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
• A Silicon Surface Code Architecture Resilient Against Leakage Errors
• Controllable Single Cooper Pair Splitting in Hybrid Quantum Dot Systems
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• A quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry
• Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices
• Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
• Generalized figure of merit for qubit readout
• Radio-frequency C-V measurements with sub-attofarad sensitivity
• Spin-photon coupling for atomic qubit devices in silicon
• Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots
• 3-Dimensional Tuning of an Atomically Defined Silicon Tunnel Junction
• Gate-Sensing Charge Pockets in the Semiconductor Qubit Environment
• Theory of multi-dimensional quantum capacitance and its application to spin and charge discrimination in quantum-dot arrays
• Improved Single-Shot Qubit Readout Using Twin RF-SET Charge Correlations
• Gate-based spin readout of hole quantum dots with site-dependent $g-$factors
• Image of dynamic local exchange interactions in the dc magnetoresistance of spin-polarized current through a dopant
• Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators
• Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor
• Scalable Parity Architecture With a Shuttling-Based Spin Qubit Processor
• All-electrical operation of a spin qubit coupled to a high-Q resonator
• Theory of the Simultaneous Transient Dispersive Readout of Multiple Spin Qubits
• The role of antisymmetric orbitals and electron-electron interactions on the two-particle spin and valley blockade in graphene double quantum dots
• Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots
• Effects of valley splitting on resonant-tunneling readout of spin qubits