Electrical spin injection into graphene through monolayer hexagonal boron nitride
arXiv:1305.7095 · doi:10.7567/APEX.6.073001
Abstract
We demonstrate electrical spin injection from a ferromagnet to a bilayer graphene (BLG) through a monolayer (ML) of single-crystal hexagonal boron nitride (h-BN). A Ni81Fe19/ML h-BN/BLG/h-BN structure is fabricated using a micromechanical cleavage and dry transfer technique. The transport properties across the ML h-BN layer exhibit tunnel barrier characteristics. Spin injection into BLG has been detected through non local magnetoresistance measurements.
15 pages, 4 figures, accepted to Appl. Phys. Express
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- Dry release transfer of graphene and few-layer h-BN by utilizing thermoplasticity of polypropylene carbonate for fabricating edge-contact-free van der Waals heterostructures
- Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures
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- Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
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- Spin transport in fully hexagonal boron nitride encapsulated graphene
- Large-scale BN tunnel barriers for graphene spintronics
- Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2
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- Highly anisotropic spin transport in ultrathin black phosphorus
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- Spin injection into multilayer graphene from highly spin-polarized Co2FeSi Heusler alloy
- Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes
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- Wideband and on-chip excitation for dynamical spin injection into graphene
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- Surface Circular Photogalvanic Effect in Tl-Pb Monolayer Alloys on Si(111) with Giant Rashba Splitting
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