1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack

Abstract

We report the discovery of a super-giant tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The effect arises from a strong dependence of the electronic structure of ferromagnetic semiconductors on the magnetization orientation rather than from a parallel or antiparallel alignment of the contacts. The key novel spintronics features of this effect are: (i) both normal and inverted spin-valve like signals; (ii) a large non-hysteretic magnetoresistance for magnetic fields perpendicular to the interfaces; (iii) magnetization orientations for extremal resistance are, in general, not aligned with the magnetic easy and hard axis. (iv) Enormous amplification of the effect at low bias and temperatures.

References in corpus (3)

• Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer
• Coulomb Gap in a Doped Semiconductor near the Metal-Insulator Transition: Tunneling Experiment and Scaling Ansatz
• Tunnel Magneto-resistance in GaMnAs: going beyond Jullière formula

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