157 citations · 346 across the 4 of their papers we have counts for
4 papers
Magnetization-Switched Metal-Insulator Transition in a (Ga,Mn)As Tunnel Device
K. Pappert, M. J. Schmidt, S. Hümpfner +6
We observe the occurrence of an Efros-Shklovskii gap in (Ga,Mn)As based tunnel junctions. The occurrence of the gap is controlled by the extent of the hole wave-function on the Mn…
Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices
C. Gould, K. Pappert, C. Rüster +6
Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but u…
1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack
C. Rüster, C. Gould, T. Jungwirth +6
We report the discovery of a super-giant tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The effect arises from a strong depende…
Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions
C. Ruester, T. Borzenko, C. Gould +7
We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side…