33 citations · 39 across the 2 of their papers we have counts for
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cond-mat.str-el2006★ 33 cited
Magnetization-Switched Metal-Insulator Transition in a (Ga,Mn)As Tunnel Device
K. Pappert, M. J. Schmidt, S. Hümpfner +6
We observe the occurrence of an Efros-Shklovskii gap in (Ga,Mn)As based tunnel junctions. The occurrence of the gap is controlled by the extent of the hole wave-function on the Mn…
cond-mat.mes-hall2006★ 6 cited
Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices
C. Gould, K. Pappert, C. Rüster +6
Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but u…