Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides

Abstract

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/Vs for the p-type conductivity in the WSe2-based FETs at room temperature). These novel FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in "flexible" electronics.

3 pages

References in corpus (2)

• Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator
• Single-Crystal Organic Field Effect Transistors with the Hole Mobility ~ 8 cm2/Vs

Cited by in corpus (70)

• Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
• New Perspectives for Rashba Spin-Orbit Coupling
• High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
• Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide
• Solar-energy conversion and light emission in an atomic monolayer p-n diode
• Elastic properties of freely suspended MoS2 nanosheets
• Photovoltaic effect in an electrically tunable van der Waals heterojunction
• Large-Area Aiming Synthesis of WSe2 Monolayers
• Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides
• Photocurrent generation with two-dimensional van der Waals semiconductors
• Ultrafast Dynamics of Defect-Assisted Electron-Hole Recombination in Monolayer MoS2
• Ambipolar Solution-processed Hybrid Perovskite Phototransistors
• Designing electrical contacts to MoS${}_2$ monolayers: A computational study
• Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
• High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
• Mono- and Bilayer WS2 Light-Emitting Transistors
• Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
• Visibility of dichalcogenide nanolayers
• Intrinsic electron mobility exceeding 1000 cm${}^2$/Vs in multilayer InSe FETs
• Strong exciton-plasmon coupling in MoS2 coupled with plasmonic lattice
• Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
• Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors
• A microprocessor based on a two-dimensional semiconductor
• Field-Effect Transistors Based on Few-Layered alpha-MoTe_2
• Optical identification of atomically thin dichalcogenide crystals
• High-Mobility Holes in Dual-Gated WSe${}_2$ Field-Effect Transistors
• Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2 from first principles
• Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior
• Photovoltaic and photothermoelectric effect in a double-gated WSe2 device
• Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides
• High-Performance Flexible Nanoscale Field-Effect Transistors Based on Transition Metal Dichalcogenides
• Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2
• Observation of monolayer valence band spin-orbit effect and induced quantum well states (QWS) in MoX2
• Line Defects in Molybdenum Disulfide Layers
• Hall and field-effect mobilities in few layered $p$-WSe${}_2$ field-effect transistors
• Device physics of van der Waals heterojunction solar cells
• A WSe2 vertical field emission transistor
• Intrinsic carrier mobility of multi-layered MoS${}_2$ field-effect transistors on SiO${}_2$
• MoS2 Nanoribbon Transistors: Transition from Depletion-mode to Enhancement-mode by Channel Width Trimming
• Response to comment "Measurement of mobility in dual-gated MoS2 transistors"
• Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors
• Anionic depolymerization transition in IrTe2
• A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2
• High Intrinsic Mobility and Ultrafast Carrier Dynamics in Multilayer Metal Dichalcogenide MoS2
• Characterization of the second- and third-harmonic optical susceptibilities of atomically thin tungsten diselenide
• Multi-Valley Superconductivity In Ion-Gated MoS2 Layers
• A systematic investigation of thermal conductivities of transition metal dichalcogenides
• Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures
• Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot
• Scanning photocurrent microscopy reveals electron-hole asymmetry in ionic liquid-gated WS2 transistors
• Ionic Gate Spectroscopy of 2D Semiconductors
• Comparative Study of Chemically Synthesized and Exfoliated Multilayer MoS2 Field-Effect Transistors
• Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide
• Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping
• Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature
• Electronic and Optical properties of transition metal dichalcogenides under symmetric and asymmetric field-effect doping
• Photodetection in p-n junctions formed by electrolyte-gated transistors of two-dimensional crystals
• Negative Compressibility in Graphene-terminated Black Phosphorus Heterostructures
• Dielectric screening at TMD:hBN interfaces: Monolayer-to-bulk transition, local-field effect, and spatial dependence
• Hole spin relaxation in bilayer WSe${}_2$
• Band tail formation in mono and multilayered transition metal dichalcogenides: A detailed assessment and a quick-reference guide
• Light sources with bias tunable spectrum based on van der Waals interface transistors
• Optical properties of orthorhombic germanium sulfide: Unveiling the Anisotropic Nature of Wannier Exciton
• Spin relaxation, Josephson effect and Yu-Shiba-Rusinov states in superconducting bilayer graphene
• Electron-Doping Induced Semiconductor to Metal Transitions in ZrSe2 Layers via Copper Atomic Intercalation
• Staircase-like transfer characteristics in multilayer MoS2 field-effect transistors
• Atomic Scale Insights Into The Mechanical Characteristics of Monolayer 1T-Titanium Disulphide: A Molecular Dynamics Study
• Impact of 150keV and 590keV proton irradiation on monolayer MoS2
• Electroluminescence from indirect band gap semiconductor ReS${}_2$
• Layered semiconductor devices with water top-gates: High on-off ratio field-effect transistors and aqueous sensors