Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect

Abstract

In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external magnetic field. Here, we explore the potential of this effect in magnetic topological insulator thin films for metrological applications. Using a cryogenic current comparator system, we measure quantization of the Hall resistance to within one part per million and longitudinal resistivity under 10 m$\Omega$ per square at zero magnetic field. Increasing the current density past a critical value leads to a breakdown of the quantized, low-dissipation state, which we attribute to electron heating in bulk current flow. We further investigate the pre-breakdown regime by measuring transport dependence on temperature, current, and geometry, and find evidence for bulk dissipation, including thermal activation and possible variable-range hopping.

9 pages, 4 figures, with 7 pages of supplementary information

References in corpus (31)

• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Large-gap quantum spin Hall insulators in tin films
• Quantum Transport in Semiconductor Nanostructures
• High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
• Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator
• Scale-Invariant Dissipationless Chiral Transport in Magnetic Topological Insulators beyond the Two-Dimensional Limit
• Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators
• Hedgehog Spin-texture and Berry's Phase tuning in a Magnetic Topological Insulator
• Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect
• Precise quantization of anomalous Hall effect near zero magnetic field
• Prediction of Near-Room-Temperature Quantum Anomalous Hall Effect on Honeycomb Materials
• Imaging Dirac-Mass Disorder from Magnetic Dopant-Atoms in the Ferromagnetic Topological Insulator Cr${}_x$(Bi${}_{0.1}$Sb${}_{0.9}$)${}_{2-x}$Te${}_3$
• Quantum Hall Effect on Top and Bottom Surface States of Topological Insulator (Bi1-xSbx)2Te3 Films
• Zero-field dissipationless chiral edge transport and the nature of dissipation in the quantum anomalous Hall state
• Giant Anisotropic Magnetoresistance in a Quantum Anomalous Hall Insulator
• Coincidence of Superparamagnetism and perfect quantization in the Quantum Anomalous Hall state
• Anomalous Edge Transport in the Quantum Anomalous Hall State
• Electronic transport and the localization length in the quantum Hall effect
• Scaling of the Quantum Anomalous Hall Effect as an Indicator of Axion Electrodynamics
• Zener Tunneling in Semiconducting Nanotube and Graphene Nanoribbon p-n Junctions
• Large discrete jumps observed in the transition between Chern states in a ferromagnetic Topological Insulator
• Zero-field quantum anomalous Hall metrology as a step towards a universal quantum standard unit system
• Quantum Metrology Triangle Experiments: A Status Review
• Current-driven instability of quantum anomalous Hall effect in ferromagnetic topological insulators
• Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film
• Interband Tunneling in 2D Crystal Semiconductors
• Practical quantum realization of the ampere from the electron charge
• Influence of voltmeter input impedance on quantum Hall effect measurements
• Quantum Hall Resistance Overshoot in 2-Dimensional Electron Gases - Theory and Experiment
• Smearing of the quantum anomalous Hall effect due to statistical fluctuations of magnetic dopants

Cited by in corpus (55)

• Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene
• Colloquium: Quantum anomalous Hall effect
• Topological Quantum Computation Based on Chiral Majorana Fermions
• The 2021 Quantum Materials Roadmap
• Transport in two-dimensional topological materials: recent developments in experiment and theory
• Non-Majorana Origin of the Half-Quantized Conductance Plateau in Quantum Anomalous Hall Insulator and Superconductor Hybrid Structures
• Mn-rich MnSb2Te4: A topological insulator with magnetic gap closing at high Curie temperatures of 45-50 K
• Nanoscale imaging of equilibrium quantum Hall edge currents and of the magnetic monopole response in graphene
• Families of magnetic semiconductors -- an overview
• Zero-field quantum anomalous Hall metrology as a step towards a universal quantum standard unit system
• Loss of Hall Conductivity Quantization in a Non-Hermitian Quantum Anomalous Hall Insulator
• Meta-magnetism of weakly-coupled antiferromagnetic topological insulators
• Topology and Observables of the Non-Hermitian Chern Insulator
• Chiral transport along magnetic domain walls in the quantum anomalous Hall effect
• Quantum anomalous Hall edge channels survive up to the Curie temperature
• Current-induced breakdown of the quantum anomalous Hall effect
• Confinement-Induced Chiral Edge Channel Interaction in Quantum Anomalous Hall Insulators
• Coexistence of surface and bulk ferromagnetism mimics skyrmion Hall effect in a topological insulator
• Progress and prospects in the quantum anomalous Hall effect
• Experimental evidence on the dissipationless transport of chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices
• Induced superconducting correlations in the quantum anomalous Hall insulator
• Bulk dissipation in the quantum anomalous Hall effect
• Severe Dirac Mass Gap Suppression in Sb_2Te_3-based Quantum Anomalous Hall Materials
• The ampere and the electrical units in the quantum era
• Conductivity of two-dimensional narrow gap semiconductors subjected to strong Coulomb disorder
• Electrical Switching of the Edge Current Chirality in Quantum Anomalous Hall Insulators
• Gate-Tunable Quantum Anomalous Hall Effects in MnBi${}_2$Te${}_4$ Thin Films
• Current-induced gap opening in interacting topological insulator surfaces
• Perspectives of HgTe Topological Insulators for Quantum Hall Metrology
• Transmission lines and resonators based on quantum Hall plasmonics: electromagnetic field, attenuation and coupling to qubits
• Antiferromagnetic order in MnBi2Te4 films grown on Si(111) by molecular beam epitaxy
• Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators
• Balanced Quantum Hall Resistor
• Zero external magnetic field quantum standard of resistance at the 10-9 level
• Ferromagnetic phase transition in topological crystalline insulator thin films: interplay of anomalous Hall angle and magnetic anisotropy
• Materials for Quantum Technologies: a Roadmap for Spin and Topology
• Low-damage electron beam lithography for nanostructures on Bi${}_2$Te${}_3$-class topological insulator thin films
• Transmission Lines and Meta-Materials based on Quantum Hall Plasmonics
• A primary quantum current standard based on the Josephson and the quantum Hall effects
• Conductivity of two-dimensional small gap semiconductors and topological insulators in strong Coulomb disorder
• Macroscopic Quantum Tunneling of a Topological Ferromagnet
• A unified realization of electrical quantities from the quantum International System of Units
• Propagation, dissipation and breakdown in quantum anomalous Hall edge states probed by microwave edge plasmons
• Magnetization relaxation and search for the magnetic gap in bulk-insulating V-doped (Bi, Sb)${}_2$Te${}_3$
• Three-Dimensional Quantum Anomalous Hall Effect in Magnetic Topological Insulator Trilayers of Hundred-Nanometer Thickness
• Capacitive scheme to detect the topological magnetoelectric effect
• CdTe and HgTe doped with V, Cr, and Mn -- prospects for the quantum anomalous Hall effect
• Chiral edge state coupling theory of transport in quantum anomalous Hall insulators
• From classical to quantum regime of topological surface states via defect engineering
• Tight-binding theory of spin-spin interactions, Curie temperatures, and quantum Hall effects in topological (Hg,Cr)Te in comparison to non-topological (Zn,Cr)Te, and (Ga,Mn)N
• Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3
• HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${}^{4}He$ temperatures
• Measured potential profile in a quantum anomalous Hall system suggests bulk-dominated current flow
• Interlayer Exchange Coupling-Induced Critical-Metal-to-Insulator Phase Transition in Quantum Anomalous Hall Insulators
• Effects of GaAs Buffer Layer on Structural, Magnetic, and Transport Properties of Magnetic Topological Insulators Cr${}_y$(Bi${}_x$Sb${}_{1-x}$)${}_{2-y}$Te${}_3$ and V${}_y$(Bi${}_x$Sb${}_{1-x}$)${}_{2-y}$Te${}_3$ Films