Photocurrent generation with two-dimensional van der Waals semiconductors
arXiv:1506.00679 · doi:10.1039/C5CS00106D
Abstract
Two-dimensional (2D) materials have attracted a great deal of interest in recent years. This family of materials allows for the realization of versatile electronic devices and holds promise for next-generation (opto)electronics. Their electronic properties strongly depend on the number of layers, making them interesting from a fundamental standpoint. For electronic applications, semiconducting 2D materials benefit from sizable mobilities and large on/off ratios, due to the large modulation achievable via the gate field-effect. Moreover, being mechanically strong and flexible, these materials can withstand large strain (>10\%) before rupture, making them interesting for strain engineering and flexible devices. Even in their single layer form, semiconducting 2D materials have demonstrated efficient light absorption, enabling large responsivity in photodetectors. Therefore, semiconducting layered 2D materials are strong candidates for optoelectronic applications, especially for photodetection. Here, we review the state-of-the-art in photodetectors based on semiconducting 2D materials, focusing on the transition metal dichalcogenides, novel van der Waals materials, black phosphorus, and heterostructures.
16 Figures, 6 Tables
References in corpus (46)
- Electric Field Effect in Atomically Thin Carbon Films
- Two Dimensional Atomic Crystals
- Detection of Individual Gas Molecules Absorbed on Graphene
- Boron nitride substrates for high-quality graphene electronics
- Room-Temperature Quantum Hall Effect in Graphene
- Graphene photodetectors for high-speed optical communications
- Atomically thin p-n junctions with van der Waals heterointerfaces
- Ultrafast Charge Transfer in Atomically Thin MoS2/WS2 Heterostructures
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- Making graphene visible
- Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
- Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
- Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
- Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode
- Strong light-matter coupling in two-dimensional atomic crystals
- Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
- Elastic properties of freely suspended MoS2 nanosheets
- Graphene field effect transistors as room-temperature Terahertz detectors
- Photocurrent generation with two-dimensional van der Waals semiconductors
- Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
- Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating
- Tunable optical properties of multilayers black phosphorus thin films
- Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures
- Mechanisms of photoconductivity in atomically thin MoS2
- Rayleigh Imaging of Graphene and Graphene Layers
- Large and tunable photo-thermoelectric effect in single-layer MoS2
- Photoconductivity of biased graphene
- Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
- High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
- Probing excitonic states in ultraclean suspended two-dimensional semiconductors by photocurrent spectroscopy
- Light Generation and Harvesting in a Van der Waals Heterostructure
- Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures
- Electron and Hole Mobilities in Single-Layer WSe2
- Intrinsic response time of graphene photodetectors
- Photovoltaic and photothermoelectric effect in a double-gated WSe2 device
- Large Thermoelectricity via Variable Range Hopping in Chemical Vapor Deposition Grown Single-layer MoS2
- Wedging Transfer of Nanostructures
- Observation of interlayer phonon modes in van der Waals heterostructures
- Origin of photoresponse in black phosphorus photo-transistors
- Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors
- Stamp transferred suspended graphene mechanical resonators for radio-frequency electrical readout
- Thermoelectric power of bulk black-phosphorus
- Two-dimensional metal-chalcogenide films in tunable optical microcavities
- Substrate-supported thermometry platform for nanomaterials like graphene, nanotubes, and nanowires
- Avalanche photodiodes based on MoS2/Si heterojunctions
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- Van der Waals Materials for Atomically-Thin Photovoltaics: Promise and Outlook
- Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability
- A strain tunable single-layer MoS2 photodetector
- Ambient Effects on Photogating in MoS2 Photodetectors
- Environmental Effects in Mechanical Properties of Few-layer Black Phosphorus
- Highly responsive UV-photodetectors based on single electrospun TiO2 nanofibres
- Scalable Fabrication of Atomically Thin Monolayer MoS2 Photodetectors
- Engineering the optoelectronic properties of MoS2 photodetectors through reversible noncovalent functionalization
- Fast Yet Quantum-Efficient Few-Layer Vertical MoS2 Photodetectors
- Evidence of Direct Electronic Band Gap in two-dimensional van der Waals Indium Selenide crystals
- Microscopic origin of the bolometric effect in graphene
- Ultrasensitive Tunability of the Direct Bandgap of Two-dimensional InSe Flakes via Strain Engineering