Spin transport in high quality suspended graphene devices
arXiv:1207.1572 · doi:10.1021/nl301050a
Abstract
We measure spin transport in high mobility suspended graphene (μ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (τ_s ~ 150 ps) and spin relaxation length (λ_s=4.7 μm) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.
22 pages, 6 figures; Nano Letters, Article ASAP (2012) (http://pubs.acs.org/doi/abs/10.1021/nl301050a)
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- Enhancement of spin relaxation time in hydrogenated graphene spin valve devices
- Localized states influence spin transport in epitaxial graphene
- Rashba Spin Orbit Interaction and Birefringent Electron Optics in Graphene
- Large-scale BN tunnel barriers for graphene spintronics
- Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments
- Contact-induced charge contributions to non-local spin transport measurements in Co/MgO/graphene devices
- Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC
- Absence of hyperfine effects in C-graphene spin valve devices
- Spin transport in graphene nanostructures
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- Spin injection from a ferromagnet into a semiconductor in the case of a rough interface
- Spin diffusion in ultracold spin-orbit coupled K gas
- The shape of the Hanle curve in spin-transport structures in the presence of the ac drive
- Manifestation of two-channel nonlocal spin transport in the shapes of the Hanle curves