Electrically Tunable Band Gap in Silicene

Abstract

We report calculations of the electronic structure of silicene and the stability of its weakly buckled honeycomb lattice in an external electric field oriented perpendicular to the monolayer of Si atoms. We find that the electric field produces a tunable band gap in the Dirac-type electronic spectrum, the gap being suppressed by a factor of about eight by the high polarizability of the system. At low electric fields, the interplay between this tunable band gap, which is specific to electrons on a honeycomb lattice, and the Kane-Mele spin-orbit coupling induces a transition from a topological to a band insulator, whereas at much higher electric fields silicene becomes a semimetal.

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• Electric Field Effect in Atomically Thin Carbon Films
• Topological Insulators
• Topological insulators and superconductors
• Quantum Spin Hall Effect in Graphene
• Two and one-dimensional honeycomb structures of silicon and germanium
• Quantum Spin Hall Effect in Silicene
• Epitaxial Growth of a Silicene Sheet
• Domain walls in gapped graphene
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