Tuning the electronic structures of silicene and germanene by biaxial strain and electric field

Abstract

We present a first-principles study of effects of small biaxial strain ($|\epsilon |\le 5\%$) and perpendicular electric field (E-field) on the electronic and phonon properties of low-buckled silicene and germanene. With an increase of the biaxial strain, the conduction bands at the high symmetric $\Gamma$ and $M$ points of the first Brillouin zone shift significantly towards the Fermi level in both silicene and germanene. In contrast, the E-field changes the band dispersions near the $\Gamma$ and open a small band gap at the K point in silicene. We found that the field-induced gap opening in silicene could be enhanced by a compressive strain while mitigated by a tensile strain. This result highlights the tunability of the electronic structures of silicene by combining the mechanical strain and the electric field.

8 pages, 7 figures

References in corpus (8)

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• All-graphene integrated circuits via strain engineering
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