Moiré-modulated band gap and van Hove singularities in twisted bilayer germanene
arXiv:2403.14560 · doi:10.1088/2053-1583/ad4166
Abstract
Twisting bilayers of two-dimensional topological insulators has the potential to create unique quantum states of matter. Here, we successfully synthesized a twisted bilayer of germanene on Ge2Pt(101) with a 21.8 degrees twist angle, corresponding to a commensurate () structure. Using scanning tunneling microscopy and spectroscopy, we unraveled the structural and electronic properties of this configuration, revealing a moiré-modulated band gap and a well-defined edge state. This band gap opens at AB/BA stacked sites and closes at AA stacked sites, a phenomenon attributed to the electric field induced by the scanning tunneling microscopy tip. Our study further revealed two van Hove singularities at -0.8 eV and +1.04 eV, resulting in a Fermi velocity of m/s. Our tight-binding results uncover a unique quantum state, where the topological properties could be regulated through an electric field, potentially triggering two topological phase transitions.
arXiv comment18 pages, 3 figures
References in corpus (36)
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- Quantum Spin Hall Effect in Graphene
- Topological Order and the Quantum Spin Hall Effect
- Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
- Two and one-dimensional honeycomb structures of silicon and germanium
- Moire bands in twisted double-layer graphene
- Quantum Spin Hall Effect in Silicene
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Superconductors, Orbital Magnets, and Correlated States in Magic Angle Bilayer Graphene
- Germanene: a novel two-dimensional Germanium allotrope akin to Graphene and Silicene
- Graphene bilayer with a twist: electronic structure
- Intrinsic quantized anomalous Hall effect in a moiré heterostructure
- Low-energy effective Hamiltonian involving spin-orbit coupling in Silicene and Two-Dimensional Germanium and Tin
- Moiré Excitons in Van der Waals Heterostructures
- Observation of Van Hove singularities in twisted graphene layers
- Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
- Electrically Tunable Band Gap in Silicene
- Topological Insulator and Helical Zero Mode in Silicene under Inhomogeneous Electric Field
- Commensuration and Interlayer Coherence in Twisted Bilayer Graphene
- Electronic structure of turbostratic graphene
- Unravelling the intrinsic and robust nature of van Hove singularities in twisted bilayer graphene
- Topological mosaic in Moiré superlattices of van der Waals heterobilayers
- Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor
- Transport Between Twisted Graphene Layers
- Germanene termination of GePt crystals on Ge(110)
- Doped Twisted Bilayer Graphene near Magic Angles: Proximity to Wigner Crystallization not Mott Insulation
- The 2021 Quantum Materials Roadmap
- Twistronics: A turning point in 2D quantum materials
- Two-dimensional Dirac signature of germanene
- Silicene vs. ordered 2D silicide: the atomic and electronic structure of the Si-/Pt(111) surface reconstruction
- 2024 roadmap on 2D topological insulators
- A moiré superlattice on the surface of a topological insulator
- Quasi-Topological Insulator and Trigonal Warping in Gated Bilayer Silicene
- Investigation of the atomic and electronic structures of highly ordered two-dimensional germanium on Au(111)
- Moiré superlattice effects and band structure evolution in near-30-degree twisted bilayer graphene
- Hexagonally Warped Dirac Cones and Topological Phase Transition in Silicene Superstructure