Moiré-modulated band gap and van Hove singularities in twisted bilayer germanene

Abstract

Twisting bilayers of two-dimensional topological insulators has the potential to create unique quantum states of matter. Here, we successfully synthesized a twisted bilayer of germanene on Ge2Pt(101) with a 21.8${}^o$ degrees twist angle, corresponding to a commensurate ($\sqrt{7}\times \sqrt{7}$) structure. Using scanning tunneling microscopy and spectroscopy, we unraveled the structural and electronic properties of this configuration, revealing a moiré-modulated band gap and a well-defined edge state. This band gap opens at AB/BA stacked sites and closes at AA stacked sites, a phenomenon attributed to the electric field induced by the scanning tunneling microscopy tip. Our study further revealed two van Hove singularities at -0.8 eV and +1.04 eV, resulting in a Fermi velocity of $(8\pm 1)\times 10^5$ m/s. Our tight-binding results uncover a unique quantum state, where the topological properties could be regulated through an electric field, potentially triggering two topological phase transitions.

18 pages, 3 figures

References in corpus (11)

• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Germanene: a novel two-dimensional Germanium allotrope akin to Graphene and Silicene
• Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
• Germanene termination of Ge${}_2$Pt crystals on Ge(110)
• The 2021 Quantum Materials Roadmap
• Twistronics: A turning point in 2D quantum materials
• Two-dimensional Dirac signature of germanene
• 2024 roadmap on 2D topological insulators
• Quasi-Topological Insulator and Trigonal Warping in Gated Bilayer Silicene
• Investigation of the atomic and electronic structures of highly ordered two-dimensional germanium on Au(111)
• Hexagonally Warped Dirac Cones and Topological Phase Transition in Silicene Superstructure