Lithographic engineering of anisotropies in (Ga,Mn)As
arXiv:cond-mat/0612439 · doi:10.1063/1.2710478
Abstract
The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on novel phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method to locally control the anisotropy in order to allow the elaboration of devices. Here we present a method which provides patterning induced anisotropy which not only can be applied locally, but also dominates over the intrinsic material anisotropy at all temperatures.
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