Spin polarization and metallic behavior of a silicon two-dimensional electron system

Abstract

We have studied the magnetic and transport properties of an ultra-low-resistivity two-dimensional electron system in a Si/SiGe quantum well. The spin polarization increases linearly with the in-plane magnetic field and the enhancement of the spin susceptibility is consistent with that in Si-MOS structures. Temperature dependence of resistivity remains metallic even in strong magnetic fields where the spin degree of freedom is frozen out. We also found a magnetoresistance anisotropy with respect to an angle between the current and the in-plane magnetic field.

4 pages, RevTeX, 6 eps-figures

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Cited by in corpus (25)

• Transport in strongly correlated two dimensional electron fluids
• Metal-insulator transitions and the effects of electron-electron interactions in two-dimensional electron systems
• The so-called two dimensional metal-insulator transition
• Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well
• Spin-valley phase diagram of the two-dimensional metal-insulator transition
• Electrically detected electron spin resonance in a high mobility silicon quantum well
• Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems
• Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas
• An apparent metal insulator transition in high mobility 2D InAs heterostructures
• Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
• Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field
• Spin Seebeck effect and thermal spin galvanic effect in Ni80Fe20/p-Si bilayers
• Evidence for Two-Dimensional Spin-Glass Ordering in Submonolayer Fe Films on Cleaved InAs Surfaces
• Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells
• Quantum Dots and Etch-Induced Depletion of a Silicon 2DEG
• Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well
• A metal-insulator transition in 2D: Established facts and open questions
• Conductivity of a spin-polarized two-dimensional electron liquid in the ballistic regime
• Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si
• Metallic behavior in Si/SiGe 2D electron systems
• Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection
• Spin susceptibility of two dimensional hole gases in GaAs/AlGaAs heterostructures
• Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field
• In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system
• Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system