3 papers
cond-mat.mes-hall2005
Electrically detected electron spin resonance in a high mobility silicon quantum well
Junya Matsunami, Mitsuaki Ooya, Tohru Okamoto
The resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Resul…
cond-mat.str-el2005
Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system
Mitsuaki Ooya, Kiyohiko Toyama, Tohru Okamoto
We have studied the magnetoresistance in a high-mobility Si inversion layer down to low electron concentrations at which the longitudinal resistivity has an activated temp…
cond-mat.mes-hall2003
Spin polarization and metallic behavior of a silicon two-dimensional electron system
Tohru Okamoto, Mitsuaki Ooya, Kunio Hosoya +1
We have studied the magnetic and transport properties of an ultra-low-resistivity two-dimensional electron system in a Si/SiGe quantum well. The spin polarization increases linearl…