paper

Electrostatically induced quantum point contact in bilayer graphene

arXiv:1707.09282 · doi:10.1021/acs.nanolett.7b04666

Abstract

We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as G. This exceeds previously reported values of 10 - 100 k.\cite{Zou2010,Yan2010,Zhu2016a} We attribute this improvement to the use of a graphite back gate. We realize two split gate devices which define an electronic channel on the scale of the Fermi-wavelength. A channel gate covering the gap between the split gates varies the charge carrier density in the channel. We observe device-dependent conductance quantization of and . In quantizing magnetic fields normal to the sample plane, we recover the four- fold Landau level degeneracy of bilayer graphene. Unexpected mode crossings appear at the crossover between zero magnetic field and the quantum Hall regime.

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