Observation of Valley Zeeman and Quantum Hall Effects at Q Valley of Few-Layer Transition Metal Disulfides

Abstract

In few-layer (FL) transition metal dichalcogenides (TMDC), the conduction bands along the Gamma-K directions shift downward energetically in the presence of interlayer interactions, forming six Q valleys related by three-fold rotational symmetry and time reversal symmetry. In even-layers the extra inversion symmetry requires all states to be Kramers degenerate, whereas in odd-layers the intrinsic inversion asymmetry dictates the Q valleys to be spin-valley coupled. In this Letter, we report the transport characterization of prominent Shubnikov-de Hass (SdH) oscillations for the Q valley electrons in FL transition metal disulfide (TMDs), as well as the first quantum Hall effect (QHE) in TMDCs. Our devices exhibit ultrahigh field-effect mobilities (~16,000 cm2V-1s-1 for FL WS2 and ~10,500 cm2V-1s-1 for FL MoS2) at cryogenic temperatures. Universally in the SdH oscillations, we observe a valley Zeeman effect in all odd-layer TMD devices and a spin Zeeman effect in all even-layer TMD devices.

arXiv comment20 pages, 4 figures

References in corpus (30)

• Atomically thin MoS2: A new direct-gap semiconductor
• Two Dimensional Atomic Crystals
• Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
• Control of valley polarization in monolayer MoS2 by optical helicity
• Valley polarization in MoS2 monolayers by optical pumping
• MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
• Valley contrasting physics in graphene: magnetic moment and topological transport
• The Valley Hall Effect in MoS2 Transistors
• Mobility engineering and metal-insulator transition in monolayer MoS2
• Valley filter and valley valve in graphene
• Valley Dependent Optoelectronics from Inversion Symmetry Breaking
• Magnetic Control of Valley Pseudospin in Monolayer WSe2
• Valley Zeeman Effect in Elementary Optical Excitations of a Monolayer WSe2
• Breaking of valley degeneracy by magnetic field in monolayer MoSe2
• Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering
• Electrical Tuning of Valley Magnetic Moment via Symmetry Control
• Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
• Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2
• High quality sandwiched black phosphorus heterostructure and its quantum oscillations
• Quantum Hall Effect in Black Phosphorus Two-dimensional Electron Gas
• Exciton Diamagnetic Shifts and Valley Zeeman Effects in Monolayer WS${}_2$ and MoS${}_2$ to 65 Tesla
• High-Mobility Holes in Dual-Gated WSe${}_2$ Field-Effect Transistors
• Gate Tunable Quantum Oscillations in Air-Stable and High Mobility Few-Layer Phosphorene Heterostructures
• Shubnikov-de Haas oscillations of high mobility holes in monolayer and bilayer WSe${}_2$: Landau level degeneracy, effective mass, and negative compressibility
• Unconventional Quantum Hall Effect and Tunable Spin Hall Effect in MoS2 Trilayers
• Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides
• Valley Zeeman effect and spin-valley polarized conductance in monolayer MoS${}_2$ in a perpendicular magnetic field
• Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) MOSFETs
• Observation of intervalley quantum interference in epitaxial monolayer WSe2
• Detection of Interlayer Interaction in Few-layer Graphene through Landau Level Spectroscopy

Cited by in corpus (40)

• Electronics and optoelectronics of quasi-one dimensional layered transition metal trichalcogenides
• Moiré Intralayer Excitons in a MoSe${}_2$/MoS${}_2$ Heterostructure
• Quantum Hall Effect of Weyl Fermions in Semiconducting n-type Tellurene
• Interactions and magnetotransport through spin-valley coupled Landau levels in monolayer MoS${}_2$
• Intrinsic valley Hall transport in atomically thin MoS2
• Large effective mass and interaction-enhanced Zeeman splitting of $K$-valley electrons in MoSe${}_2$
• Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe${}_2$
• Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene
• Multi-Valley Superconductivity In Ion-Gated MoS2 Layers
• Electrotunable artificial molecules based on van der Waals heterostructures
• Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures
• Band filling and cross quantum capacitance in ion gated semiconducting transition metal dichalcogenide monolayers
• Valley qubit in gated MoS${}_2$ monolayer quantum dot
• Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS${}_2$ van der Waals Heterostructures
• Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2
• High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact
• Hybrid k$\cdot$p tight-binding model for subbands and infrared intersubband optics in few-layer films of transition-metal dichalcogenides: MoS${}_2$, MoSe${}_2$, WS${}_2$ and WSe${}_2$
• Probing Landau levels of strongly interacting massive Dirac electrons in layer-polarized MoS${}_2$
• Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
• Optical evidence of type-II Weyl semimetals MoTe${}_2$ and WTe${}_2$
• Landau-quantized excitonic absorption and luminescence in a monolayer valley semiconductor
• Spin-valley locking for in-gap quantum dots in a MoS2 transistor
• Alternation of Singlet and Triplet States in Carbon-Based Chain Molecules and Its Astrochemical Implications. Results of an Extensive Theoretical Study
• Low-energy band structure and even-odd layer number effect in AB-stacked multilayer graphene
• Quantum transport through MoS${}_2$ constrictions defined by photodoping
• Mapping multi-valley Lifshitz transitions induced by field-effect doping in strained MoS2 nanolayers
• Layer Control of Magneto-Optical Effects and Their Quantization in Spin-Valley Splitting Antiferromagnets
• Multi-terminal electronic transport in boron nitride encapsulated TiS${}_3$ nanosheets
• Clean BN encapsulated 2D FETs with lithography compatible contacts
• Topological Ising pairing states in monolayer and trilayer TaS${}_2$
• Optical signatures of periodic magnetization: the moiré Zeeman effect
• Optical flux pump in the quantum Hall regime
• Electron transport in dual-gated three-layer MoS${}_2$
• Anomalous metallic phase in molybdenum disulphide induced via gate-driven organic ion intercalation
• Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
• Probing the fractional quantum Hall phases in valley-layer locked bilayer MoS${}_2$
• Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet
• Self-assembled monolayers of oligophenylenes stiffer than steel and silicon, possibly even stiffer than Si${}_3$N${}_4$
• Negative compressibility in MoS2 capacitance
• Flavor Quantum Dots and Artificial Quark Model in Transition Metal Dichalcogenides