Insulating state and giant non-local response in an InAs/GaSb quantum well in the quantum Hall regime
arXiv:1308.3128 · doi:10.1103/PhysRevLett.112.036802
Abstract
We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic field. Concomitantly with a local resistance exceeding the resistance quantum by an order of magnitude, we find a pronounced non-local resistance signal of almost similar magnitude. The co-existence of these two effects is reconciled in a model of counter-propagating and dissipative quantum Hall edge channels providing backscattering, shorted by a residual bulk conductivity.
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