Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS Heterostructures
arXiv:1302.0945 · doi:10.1021/nn402919d
Abstract
Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different height of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.
arXiv comment19 pages, 5 figures
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- Probing Out-of-Plane Charge Transport in Black Phosphorus with Graphene-Contacted Vertical Field-Effect Transistors
- First-principles study of two-dimensional van der Waals heterojunctions
- Graphene-WS heterostructures for tunable spin injection and spin transport
- Contact Research Strategy for Emerging Molybdenum Disulfide and Other Two-Dimensional Field-effect Transistors
- Cross-plane enhanced thermoelectricity and phonon suppression in graphene/MoS2 van der Waals heterostructures
- Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions
- Tunneling transport in a few monolayer-thick WS2/graphene heterojunction
- Thermal transport in MoS2/Graphene hybrid nanosheets
- Valley filter from magneto-tunneling between single and bi-layer graphene
- Magneto-tunnelling spectroscopy of chiral two-dimensional electron systems
- Chemical vapor deposition growth of bilayer graphene in between molybdenum disulfide sheets
- Tuning nanowire lasers via hybridization with two-dimensional materials
- Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures