Mobility-dependent Low-frequency Noise in Graphene Field Effect Transistors
arXiv:1108.0616 · doi:10.1021/nn202749z
Abstract
We have investigated the low-frequency 1/f noise of both suspended and on-substrate graphene field-effect transistors and its dependence on gate voltage, in the temperature range between 300K and 30K. We have found that the noise amplitude away from the Dirac point can be described by a generalized Hooge's relation in which the Hooge parameter αH is not constant but decreases monotonically with the device's mobility, with a universal dependence that is sample and temperature independent. The value of αH is also affected by the dynamics of disorder, which is not reflected in the DC transport characteristics and varies with sample and temperature. We attribute the diverse behavior of gate voltage dependence of the noise amplitude to the relative contributions from various scattering mechanisms, and to potential fluctuations near the Dirac point caused by charge carrier inhomogeneity. The higher carrier mobility of suspended graphene devices accounts for values of 1/f noise significantly lower than those observed in on-substrate graphene devices and most traditional electronic materials.
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- Reduction of 1/f Noise in Graphene after Electron-Beam Irradiation
- Impurities as a source of flicker noise in graphene
- Graphene-Quantum Dots Hybrid Photodetectors with Low Dark-Current Readout
- Observation of reduced 1/f noise in Graphene field effect transistors on Boron Nitride substrates
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- Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot
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- Modeling of graphene Hall effect sensors for microbead detection
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- Suspended graphene devices with local gate control on an insulating substrate
- Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs
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