activity
19982011
most citedMobility-dependent Low-frequency Noise in Graphene Field Effect Transistors

103 citations · 328 across the 15 of their papers we have counts for

collaborators

15 papers

cond-mat.mtrl-sci2011★ 103 cited

Mobility-dependent Low-frequency Noise in Graphene Field Effect Transistors

Yan Zhang, E. E. Mendez, Xu Du

We have investigated the low-frequency 1/f noise of both suspended and on-substrate graphene field-effect transistors and its dependence on gate voltage, in the temperature range b…

cond-mat.stat-mech2005★ 22 cited

Drastic Reduction of Shot Noise in Semiconductor Superlattices

W. Song, A. K. M. Newaz, J. K. Son +1

We have found experimentally that the shot noise of the tunneling current through an undoped semiconductor superlattice is reduced with respect to the Poissonian noise value $2…

cond-mat.mes-hall2004★ 14 cited

Shot-noise characteristics of triple-barrier resonant-tunneling diodes

A. K. M. Newaz, W. Song, Y. Lin +2

We have found experimentally that the shot noise in InAlAs-InGaAs-InAlAs Triple-Barrier Resonant-Tunneling Diodes (TBRTD) is reduced over the 2eI Poissonian value whenever their di…

cond-mat.mes-hall2004

Unusual Tunneling Characteristics of Double-quantum-well Heterostructures

Y. Lin, J. Nitta, ; A. K. M. Newaz +2

We report tunneling phenomena in double InGaAs quantum-well structures that are at odds with the conventional parallel-momentum-conserving picture of tunneling be…

cond-mat.mes-hall2004★ 8 cited

Shot noise of large charge quanta in superconductor/semiconductor/superconductor junctions

F. E. Camino, V. V. Kuznetsov, E. E. Mendez +3

We have found experimentally that the noise of ballistic electron transport in a superconductor/semiconductor/superconductor junction is enhanced relative to the value given by the…

cond-mat.mes-hall2002★ 13 cited

Hopping Conductivity Beyond The Percolation Regime Probed By Shot-Noise Measurements

F. E. Camino, V. V. Kuznetsov, E. E. Mendez +4

We have observed suppression of shot noise in the variable-range hopping regime for a two-dimensional electron gas whose localization length, xi, is controlled by a gate voltage. W…