Interlayer coupling in ferromagnetic semiconductor superlattices

Abstract

We develop a mean-field theory of carrier-induced ferromagnetism in diluted magnetic semiconductors. Our approach represents an improvement over standard RKKY model allowing spatial inhomogeneity of the system, free-carrier spin polarization, finite temperature, and free-carrier exchange and correlation to be accounted for self-consistently. As an example, we calculate the electronic structure of a Mn${}_x$Ga${}_{1-x}$As/GaAs superlattice with alternating ferromagnetic and paramagnetic layers and demonstrate the possibility of semiconductor magnetoresistance systems with designed properties.

4 pages, 4 figures

References in corpus (1)

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