The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction

Abstract

We present a structural analysis of the multi-layer graphene-4HSiC(000-1}) system using Surface X-Ray Reflectivity. We show for the first time that graphene films grown on the C-terminated (000-1}) surface have a graphene-substrate bond length that is very short (0.162nm). The measured distance rules out a weak Van der Waals interaction to the substrate and instead indicates a strong bond between the first graphene layer and the bulk as predicted by ab-initio calculations. The measurements also indicate that multi-layer graphene grows in a near turbostratic mode on this surface. This result may explain the lack of a broken graphene symmetry inferred from conduction measurements on this system [C. Berger et al., Science 312, 1191 (2006)].

9 pages with 6 figures

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Cited by in corpus (47)

• The electronic properties of graphene
• Electronic structure of epitaxial graphene layers on SiC: effect of the substrate
• Approaching the Dirac point in high mobility multi-layer epitaxial graphene
• Electronic and optical properties of strained graphene and other strained 2D materials: a review
• Lattice relaxation and energy band modulation in twisted bilayer graphenes
• Raman spectroscopy of epitaxial graphene on a SiC substrate
• Maximally-localized Wannier orbitals and the extended Hubbard model for the twisted bilayer graphene
• Ab initio Study of Graphene on SiC
• Optical Absorption in Twisted Bilayer Graphene
• Commensuration and Interlayer Coherence in Twisted Bilayer Graphene
• Fermi velocity engineering in graphene by substrate modification
• Energy Spectrum and Quantum Hall Effect in Twisted Bilayer Graphene
• The epitaxial-graphene/graphene-oxide junction, an essential step towards epitaxial graphene electronics
• Inelastic Scattering and Current Saturation in Graphene
• Evidence of structural strain in epitaxial graphene layers on 6H-SiC(0001)
• Growth of Epitaxial Graphene: Theory and Experiment
• Phonon dispersions and vibrational properties of monolayer, bilayer, and trilayer graphene
• Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale
• Few layers graphene on 6H-SiC(000-1): an STM study
• Epitaxial Graphene Electronic Structure And Transport
• Moiré phonons in the twisted bilayer graphene
• The interface structure of epitaxial graphene grown on 4H-SiC(0001)
• New Synthesis Method for the Growth of Epitaxial Graphene
• Investigation of Long Monolayer Graphene Ribbons grown on Graphite Capped 6H-SiC (000-1)
• Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)
• Universal classification of twisted, strained and sheared graphene moiré superlattices
• Optical absorption of twisted bilayer graphene with interlayer potential asymmetry
• Selective epitaxial growth of graphene on SiC
• Thermodynamic equilibrium conditions of graphene films on SiC
• Role of structure of C-terminated 4H-SiC(000) surface in growth of graphene layers - transmission electron microscopy and density functional theory studies
• Spin splitting and strain in epitaxial monolayer WSe${}_2$ on graphene
• Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC
• Atomic and electronic structure of monolayer graphene on 6H-SiC(000-1)(3 x 3) : a scanning tunneling microscopy study
• Interface Structure of Graphene on SiC(000-1)
• Complex evolution of the electronic structure from polycrystalline to monocrystalline graphene: generation of a new Dirac point
• Relative Stability of Bernal and Rhombohedral Stackings in Trilayer Graphene under Distortions
• Orbital magnetic susceptibility of finite-sized graphene
• Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the (3$\times$3)-3C-SiC($\bar{\text{1}}\bar{\text{1}}\bar{\text{1}}$) reconstruction
• Amorphous interface layer in thin graphite films grown on the carbon face of SiC
• Tunable zero-energy transmission resonances in shifted graphene bilayer
• Single-layer metallicity and interface magnetism of epitaxial graphene on SiC(000$\bar{1}$)
• Mimicking Nanoribbon Behavior Using a Graphene Layer on SiC
• Effective-mass theory of collapsed carbon nanotubes
• Formation of Graphene atop a Si adlayer on the C-face of SiC
• Photon absorption in twisted bilayer graphene
• Magneto-electronic properties of twisted bilayer graphene system
• Raman spectroscopy and imaging of graphene