Electric Field Control of Shallow Donor Impurities in Silicon

Abstract

We present a tight-binding study of donor impurities in Si, demonstrating the adequacy of this approach for this problem by comparison with effective mass theory and experimental results. We consider the response of the system to an applied electric field: donors near a barrier material and in the presence of an uniform electric field may undergo two different ionization regimes according to the distance of the impurity to the Si/barrier interface. We show that for impurities ~ 5 nm below the barrier, adiabatic ionization is possible within switching times of the order of one picosecond, while for impurities ~ 10 nm or more below the barrier, no adiabatic ionization may be carried out by an external uniform electric field. Our results are discussed in connection with proposed Si:P quantum computer architectures.

18 pages, 6 figures, submitted to PRB

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• Orbital Stark effect and quantum confinement transition of donors in silicon
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• Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon
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• Quantum control and manipulation of donor electrons in Si-based quantum computing
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• Mapping donor electron wave function deformations at sub-Bohr orbit resolution
• Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors
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• Simulation of Si:P spin-based quantum computer architecture
• Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface
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• Cross-talk compensation of hyperfine control in donor qubit architectures
• Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon
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