High quality GaMnAs films grown with As dimers

Abstract

We demonstrate that GaMnAs films grown with As2 have excellent structural, electrical and magnetic properties, comparable or better than similar films grown with As4. Using As2, a Curie temperature of 112K has been achieved, which is slightly higher than the best reported to date. More significantly, films showing metallic conduction have been obtained over a much wider range of Mn concentrations (from 1.5% to 8%) than has been reported for films grown with As4. The improved properties of the films grown with As2 are related to the lower concentration of antisite defects at the low growth temperatures employed.

arXiv comment8 pages, accepted for publication in J. Crystal Growth

References in corpus (1)

• Lattice constant variation and complex formation in zincblende Gallium Manganese Arsenide

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