Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure
arXiv:cond-mat/0110240 · doi:10.1063/1.1491010
Abstract
We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization. In a CoFe / Al2O3 / GaAs / (Al,Ga)As heterostructure we observed injected spin polarization in excess of 8 % at 80K.
arXiv comment5 pages, 4 figures
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Cited by in corpus (49)
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