Spin injection across magnetic/non-magnetic interfaces with finite magnetic layers

Abstract

We have reconsidered the problem of spin injection across ferromagnet/non-magnetic-semiconductor (FM/NMS) and dilute-magnetic-semiconductor/non-magnetic-semiconductor interfaces, for structures with \textit{finite} magnetic layers (FM or DMS). By using appropriate physical boundary conditions, we find expressions for the resistances of these structures which are in general different from previous results in the literature. When the magnetoresistance of the contacts is negligible, we find that the spin-accumulation effect alone cannot account for the $d$ dependence observed in recent magnetoresistance data. In a limited parameter range, our formulas predict a strong $d$ dependence arising from the magnetic contacts in systems where their magnetoresistances are sizable.

arXiv comment6 pages, 3 eps figs. (extended version- new title + two new figures added)

References in corpus (8)

• Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
• Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
• Non-ballistic spin field-effect transistor
• Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure
• Spin diffusion and injection in semiconductor structures: Electric field effects
• Datta-Das transistor with enhanced spin control
• Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor
• Diffusion theory of spin injection through resistive contacts

Cited by in corpus (7)

• Spin dynamics in semiconductors
• Multiquantum well spin oscillator
• Spin injection from a ferromagnet into a semiconductor in the case of a rough interface
• Ballistic spin resonance in multisubband quantum wires
• Thermoballistic spin-polarized electron transport in paramagnetic semiconductors
• Charge and spin transport in a metal-semiconductor heterostructure with double Schottky barriers
• Physical condition and spin-resolved exchange correlation kernels in an inhomogeneous many electron system