Energy gap tuning and gate-controlled topological phase transition in InAs/In${}_x$Ga${}_{1-x}$Sb composite quantum wells

Abstract

We report transport measurements of strained InAs/In${}_x$Ga${}_{1-x}$Sb composite quantum wells (CQWs) in the quantum spin Hall phase, focusing on the control of the energy gap through structural parameters and an external electric field. For highly strained CQWs with $x=0.4$, we obtain a gap of 35 meV, an order of magnitude larger than that reported for binary InAs/GaSb CQWs. Using a dual-gate configuration, we demonstrate an electrical-field-driven topological phase transition, which manifests itself as a re-entrant behavior of the energy gap. The sizeable energy gap and high bulk resistivity obtained in both the topological and normal phases of a single device open the possibility of electrical switching of the edge transport.

arXiv comment5 pages, 4 figures

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Cited by in corpus (8)

• Helical Liquids in Semiconductors
• Interplay of quantum spin Hall effect and spontaneous time-reversal symmetry breaking in electron-hole bilayers I: Transport properties
• Time-resolved measurement of ambipolar edge magnetoplasmon transport in InAs/InGaSb composite quantum wells
• Velocity and confinement of edge plasmons in HgTe-based 2D topological insulators
• Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics
• Interplay of quantum spin Hall effect and spontaneous time-reversal symmetry breaking in electron-hole bilayers II: Zero-field topological superconductivity
• Magneto-Induced Topological Phase Transition in Inverted InAs/GaSb Bilayers
• Colored ${\Delta }_T$ noise probes the topological character of edge modes