Large dispersive interaction between a CMOS double quantum dot and microwave photons

Abstract

We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting inductor. We achieve a coupling rate $g_0/(2\pi )=204\pm 2$ MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device, $\alpha =0.72$, and by inductively coupling to the resonator to increase its impedance, $Z_{\text{r}}=560\Omega$. In the dispersive regime, the large coupling strength at the double quantum dot hybridisation point produces a frequency shift comparable to the resonator linewidth, the optimal setting for maximum state visibility. We exploit this regime to demonstrate rapid dispersive readout of the charge degree of freedom, with a SNR of 3.3 in 50 ns. In the resonant regime, the fast charge decoherence rate precludes reaching the strong coupling regime, but we show a clear route to spin-photon circuit quantum electrodynamics using hybrid CMOS systems.

arXiv commentAccepted manuscript

References in corpus (54)

• Circuit Quantum Electrodynamics: Coherent Coupling of a Single Photon to a Cooper Pair Box
• Charge insensitive qubit design derived from the Cooper pair box
• Surface codes: Towards practical large-scale quantum computation
• Cavity quantum electrodynamics for superconducting electrical circuits: an architecture for quantum computation
• Silicon Quantum Electronics
• Ultrastrong coupling regimes of light-matter interaction
• An addressable quantum dot qubit with fault-tolerant control fidelity
• A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
• A CMOS silicon spin qubit
• The Flux Qubit Revisited to Enhance Coherence and Reproducibility
• Quantum CNOT Gate for Spins in Silicon
• Circuit Quantum Electrodynamics with a Spin Qubit
• A Coherent Spin-Photon Interface in Silicon
• Silicon CMOS architecture for a spin-based quantum computer
• Strong spin-photon coupling in silicon
• Fidelity benchmarks for two-qubit gates in silicon
• Rapid Single-Shot Measurement of a Singlet-Triplet Qubit
• Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
• Strong Coupling of a Single Electron in Silicon to a Microwave Photon
• Rapid high-fidelity multiplexed readout of superconducting qubits
• A Crossbar Network for Silicon Quantum Dot Qubits
• An analysis method for asymmetric resonator transmission applied to superconducting devices
• Mesoscopic Cavity Quantum Electrodynamics with Quantum Dots
• Strong Coupling Cavity QED with Gate-Defined Double Quantum Dots Enabled by a High Impedance Resonator
• Study of loss in superconducting coplanar waveguide resonators
• Silicon qubit fidelities approaching incoherent noise limits via pulse engineering
• Rapid high-fidelity gate-based spin read-out in silicon
• Gate-based single-shot readout of spins in silicon
• Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
• Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device
• Frequency Multiplexing for Readout of Spin Qubits
• Fast charge sensing of a cavity-coupled double quantum dot using a Josephson parametric amplifier
• Input-output theory for spin-photon coupling in Si double quantum dots
• Frequency Division Multiplexing Readout and Simultaneous Manipulation of an Array of Flux Qubits
• Quantum and Tunnelling Capacitance in Charge and Spin Qubits
• Fast gate-based readout of silicon quantum dots using Josephson parametric amplification
• Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor
• Gate-sensing coherent charge oscillations in a silicon field-effect transistor
• Radio-frequency capacitive gate-based sensing
• All-Microwave Control and Dispersive Readout of Gate-Defined Quantum Dot Qubits in Circuit Quantum Electrodynamics
• Loss Dependence on Geometry and Applied Power in Superconducting Coplanar Resonators
• Single-shot single-gate RF spin readout in silicon
• A CMOS dynamic random access architecture for radio-frequency readout of quantum devices
• Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
• Surpassing the resistance quantum with a geometric superinductor
• Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing
• Rapid detection of coherent tunneling in an InAs nanowire quantum dot through dispersive gate sensing
• A silicon-based single-electron interferometer coupled to a fermionic sea
• Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate
• Charge noise and overdrive errors in reflectometry-based charge, spin and Majorana qubit readout
• A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
• Valley-enhanced fast relaxation of gate-controlled donor qubits in silicon
• Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices
• Dispersive sensing in hybrid InAs/Al nanowires

Cited by in corpus (23)

• Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
• Review of performance metrics of spin qubits in gated semiconducting nanostructures
• Probing quantum devices with radio-frequency reflectometry
• Multicore Quantum Computing
• In-situ Tuning of the Electric Dipole Strength of a Double Dot Charge Qubit: Charge Noise Protection and Ultra Strong Coupling
• Fusion protocol for Majorana modes in coupled quantum dots
• Strong coupling between a microwave photon and a singlet-triplet qubit
• Bounds to electron spin qubit variability for scalable CMOS architectures
• Controllable Single Cooper Pair Splitting in Hybrid Quantum Dot Systems
• Modelling of spin decoherence in a Si hole qubit perturbed by a single charge fluctuator
• Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
• Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot
• Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots
• Continuous microwave photon counting by semiconductor-superconductor hybrids
• Improved Single-Shot Qubit Readout Using Twin RF-SET Charge Correlations
• Gate reflectometry in dense quantum dot arrays
• An elongated quantum dot as a distributed charge sensor
• Unified linear response theory of quantum electronic circuits
• All-electrical operation of a spin qubit coupled to a high-Q resonator
• Probing the Quantum Capacitance of Rydberg Transitions of Surface Electrons on Liquid Helium via Microwave Frequency Modulation
• Intrinsic Noise of the Single Electron Box
• 4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot
• Quantum capacitance and parity switching of a quantum-dot-based Kitaev chain