Valley qubit in gated MoS${}_2$ monolayer quantum dot

Abstract

The aim of presented research is to design a nanodevice, based on a MoS${}_2$ monolayer, performing operations on a well-defined valley qubit. We show how to confine an electron in a gate induced quantum dot within the monolayer, and to perform the NOT operation on its valley degree of freedom. The operations are carried out all electrically via modulation of the confinement potential by oscillating voltages applied to the local gates. Such quantum dot structure is modeled realistically. Through these simulations we investigate the possibility of realization of a valley qubit in analogy with a realization of the spin qubit. We accurately model the potential inside the nanodevice accounting for proper boundary conditions on the gates and space-dependent materials permittivity by solving the generalized Poisson's equation. The time-evolution of the system is supported by realistic self-consistent Poisson-Schrödinger tight-binding calculations. The tight-binding calculations are further confirmed by simulations within the effective continuum model.

arXiv comment13 pages, 12 figures

References in corpus (51)

• The electronic properties of graphene
• Ultrahigh electron mobility in suspended graphene
• Quantum Computation with Quantum Dots
• Berry Phase Effects on Electronic Properties
• Energy Band Gap Engineering of Graphene Nanoribbons
• Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
• Energy Gaps in Graphene Nanoribbons
• Elementary gates for quantum computation
• Chiral tunneling and the Klein paradox in graphene
• Valley Dependent Optoelectronics from Inversion Symmetry Breaking
• Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
• Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
• Large spin splitting in the conduction band of transition metal dichalcogenide monolayers
• Monolayer MoS2: trigonal warping, "Γ-valley", and spin-orbit coupling effects
• Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS${}_2$
• Magnetoelectric effects and valley controlled spin quantum gates in transition metal dichalcogenide bilayers
• Spin-Layer Locking Effects in Optical Orientation of Exciton Spin in Bilayer WSe2
• Klein tunneling in graphene: optics with massless electrons
• Valley excitons in two-dimensional semiconductors
• Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides
• Effective lattice Hamiltonian for monolayer MoS2 : Tailoring electronic structure with perpendicular electric and magnetic fields
• \textit{Ab-initio} Tight-Binding Hamiltonian for Transition Metal Dichalcogenides
• Analytical approach to excitonic properties of MoS2
• An Introduction to Topological Insulators
• A valley-spin qubit in a carbon nanotube
• Spintronics in MoS_2 monolayer quantum wires
• Theory of spin-orbit coupling in bilayer graphene
• Valley-spin blockade and spin resonance in carbon nanotubes
• Momentum dependence of spin-orbit interaction effects in single-layer and multi-layer transition metal dichalcogenides
• A tight-binding model for MoS${}_2$ monolayers
• Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe${}_2$
• Observation of Valley Zeeman and Quantum Hall Effects at Q Valley of Few-Layer Transition Metal Disulfides
• Universal Quantum Computing with Spin and Valley
• Intervalley coupling by quantum dot confinement potentials in monolayer transition metal dichalcogenides
• Large tunable valley splitting in edge-free graphene quantum dots on boron nitride
• Spin-valley qubit in nanostructures of monolayer semiconductors: Optical control and hyperfine interaction
• Disorder-mediated electron valley resonance in carbon nanotube quantum dots
• Electrotunable artificial molecules based on van der Waals heterostructures
• A Tight Binding Approach to Strain and Curvature in Monolayer Transition-Metal Dichalcogenides
• Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS${}_2$ van der Waals Heterostructures
• Spin-valley blockade in carbon nanotube double quantum dots
• Symmetry-forbidden intervalley scattering by atomic defects in monolayer transition-metal dichalcogenides
• Spin-dependent Refraction at the Atomic Step of Transition-metal Dichalcogenides
• Electron spin rotations induced by oscillating Rashba interaction in a quantum wire
• Tight-binding simulations of electrically driven spin-valley transitions in carbon nanotube quantum dots
• Boundary conditions for transition-metal dichalcogenide monolayers in the continuum model
• Symmetries and hybridization in the indirect interaction between magnetic moments in MoS${}_2$ nanoflakes
• Noncollinear exchange interaction in transition metal dichalcogenide edges
• Generation of Schrödinger's cat states in a planar semiconductor heterostructure
• Spin-valley resolved photon-assisted tunneling in carbon nanotube double quantum dots
• Spin-valley dynamics of electrically driven ambipolar carbon-nanotube quantum dots

Cited by in corpus (23)

• Enhanced Light-Matter Interaction in Two-Dimensional Transition Metal Dichalcogenides
• Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
• Tunable spin-polarized edge currents in proximitized transition metal dichalcogenides
• Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
• Lateral Interfaces of Transition Metal Dichalcogenides: A Stable Tunable One-Dimensional Physics Platform
• Gate-defined, Accumulation-mode Quantum Dots in Monolayer and Bilayer WSe${}_2$
• Prolonging Valley Polarization Lifetime through Gate-Controlled Exciton-to-Trion Conversion in Monolayer Molybdenum Ditelluride
• Spin-valley system in a gated MoS${}_2$-monolayer quantum dot
• Valley two-qubit system in a MoS${}_2$-monolayer gated double quantum dot
• The effect of valley, spin and band nesting on the electronic properties of gated quantum dots in a single layer of transition metal dichalcogenides (TMDCs)
• Electric Dipole Spin Resonance of 2D Semiconductor Spin Qubits
• Charge qubit in van der Waals heterostructures
• Valley and spin polarized broken symmetry states of interacting electrons in gated MoS${}_2$ quantum dots
• Coulomb Blockade Spectroscopy of a ${\mathrm{MoS}}_2$ Nanotube
• Realization of valley-spin polarized current via parametric pump in monolayer $\mathrm{Mo}{\mathrm{S}}_2$
• Scanning gate microscopy mapping of edge current and branched electron flow in a transition metal dichalcogenide nanoribbon and quantum point contact
• Shape effect on the valley splitting in lead selenide nanowires
• Hydrogenic Spin-Valley states of the Bromine donor in 2H-MoTe${}_2$
• Theory of field-modulated spin-valley-orbital pseudospin physics
• All-electrical valley filtering in graphene systems (I): A path to integrated electro-valleytronics
• Electrically tunable MoSe${}_2$/WSe${}_2$ heterostructure-based quantum dot
• Quantum valley pseudospin controlled by strain
• Spin-valley qubits in gated quantum dots in a single layer of transition metal dichalcogenides