Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides
arXiv:1703.02831 · doi:10.1038/s41699-017-0013-7
Abstract
Since their discovery single-layer semiconducting transition metal dichalcogenides have attracted much attention thanks to their outstanding optical and mechanical properties. Strain engineering in these two-dimensional materials aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we demonstrate that biaxial strain, both tensile and compressive, can be applied and released in a timescale of a few seconds in a reproducible way on transition metal dichalcogenides monolayers deposited on polymeric substrates. We can control the amount of biaxial strain applied by letting the substrate expand or compress. To do this we change the substrate temperature and choose materials with a large thermal expansion coefficient. After the investigation of the substrate-dependent strain transfer, we performed micro-differential spectroscopy of four transition metal dichalcogenides monolayers (MoS2, MoSe2, WS2, WSe2) under the application of biaxial strain and measured their optical properties. For tensile strain we observe a redshift of the bandgap that reaches a value as large as 95 meV/% in the case of single-layer WS2 deposited on polypropylene. The observed bandgap shifts as a function of substrate extension/compression follow the order MoSe2 < MoS2 < WSe2 < WS2. Theoretical calculations of these four materials under biaxial strain predict the same trend for the material-dependent rates of the shift and reproduce well the features observed in the measured reflectance spectra.
10 pages, 5 figures, 2 tables, supporting information
References in corpus (22)
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor
- Phonons in single and few-layer MoS2 and WS2
- Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2
- Local strain engineering in atomically thin MoS2
- Elastic properties of freely suspended MoS2 nanosheets
- Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
- Interfacial Stress Transfer in a Graphene Monolayer Nanocomposite
- Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2
- Strain engineering in semiconducting two-dimensional crystals
- Anomalous Raman Spectra and Thickness Dependent Electronic properties of WSe2
- Photocarrier relaxation in two-dimensional semiconductors
- Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2
- Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2
- Strong modulation of optical properties in black phosphorus through strain-engineered rippling
- Phonon Softening and Direct to Indirect Bandgap Crossover in Strained Single Layer MoSe2
- Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain
- Control of biaxial strain in single-layer Molybdenite using local thermal expansion of the substrate
- Electronic Excitations from a Perturbative LDA+GdW Approach
- Light-Matter Interactions in Two-Dimensional Transition Metal Dichalcogenides: Dominant Excitonic Transitions in mono- and few-layer MoX and Band Nesting
- Blue shifting of the A exciton peak in folded monolayer 1H-MoS2
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- Moiré superlattice in a MoSe/hBN/MoSe heterostructure: from coherent coupling of inter- and intra-layer excitons to correlated Mott-like states of electrons
- Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2
- Designing Flat Band by Strain
- A strain tunable single-layer MoS2 photodetector
- Nanoelectromechanical Sensors based on Suspended 2D Materials
- Proximity exchange effects in MoSe and WSe heterostructures with CrI: twist angle, layer, and gate dependence
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- Strained bubbles in van der Waals heterostructures as local emitters of photoluminescence with adjustable wavelength
- Variation of the fundamental band gap nature in curved two-dimensional WS2
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- Dynamic exciton funneling by local strain control in a monolayer semiconductor
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- InSe: a two-dimensional semiconductor with superior flexibility
- Electronic Structure Theory of Strained Two-Dimensional Materials with Hexagonal Symmetry
- Impact of strain on the excitonic linewidth in transition metal dichalcogenides
- Strain control of hybridization between dark and localized excitons in a 2D semiconductor
- Biaxial versus uniaxial strain tuning of single-layer MoS
- Magnon straintronics in the 2D van der Waals ferromagnet CrSBr from first-principles
- Multifaceted moiré superlattice physics in twisted WSe bilayers
- Distinctive signatures of the spin- and momentum-forbidden dark exciton states in the photo-luminescences of strained WSe monolayers under thermalization
- Microheater actuators as a versatile platform for strain engineering in 2D materials
- Nanoscale modification of WS trion emission by its local electromagnetic environment
- Two-dimensional Topological Ferroelectric Metal with Giant Shift Current
- Fundamental relations for anomalous thermoelectric transport coefficients in the non-linear regime
- Disentangling the effects of doping, strain and defects in monolayer WS2 by optical spectroscopy
- Giant piezoresistive effect and strong band gap tunability in ultrathin InSe upon biaxial strain
- Strain-dependent exciton diffusion in transition metal dichalcogenides
- Tunable exciton-optomechanical coupling in suspended monolayer MoSe2
- Apparent Differences between Single Layer Molybdenum Disulfide Fabricated via Chemical Vapor Deposition and Exfoliation
- Biaxial strain tuning of interlayer excitons in bilayer MoS2
- Pressure control of the magnetic anisotropy of the quasi-two-dimensional van der Waals ferromagnet CrGeTe
- First-Principles Mapping of the Electronic Properties of Two-Dimensional Materials for Strain-Tunable Nanoelectronics
- Strain control of exciton and trion spin-valley dynamics in monolayer transition metal dichalcogenides
- Twist-dependent intra- and interlayer excitons in moire MoSe2 homobilayers
- Mobility enhancement in CVD-grown monolayer MoS2 via patterned substrate induced non-uniform straining
- The effect of valley, spin and band nesting on the electronic properties of gated quantum dots in a single layer of transition metal dichalcogenides (TMDCs)
- Pressure dependence of intra- and interlayer excitons in 2H-MoS bilayers
- Optical properties of exciton in two-dimensional transition metal dichalcogenide nanobubbles
- Twist versus heterostrain control of optical properties of moiré exciton minibands
- Effect of strain and sulfur vacancies on the luminescence and valley polarization properties of CVD grown monolayer MoS films
- Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr
- Local tuning of WS2 photoluminescence using polymeric micro-actuators in a monolithic van der Waals heterostructure
- On the Elastic Properties and Fracture Patterns of MoX2 (X = S, Se, Te) Membranes: A Reactive Molecular Dynamics Study
- Generating coherent phonon waves in narrow-band materials: a twisted bilayer graphene phaser
- Large trion binding energy in monolayer WS via strain-enhanced electron-phonon coupling
- Proximity-enhanced valley Zeeman splitting at the WS/graphene interface
- Excitons under strain: light absorption and emission in strained hexagonal boron nitride
- Quantized exciton-exciton annihilation in monolayer WS2 on SrTiO3 substrates with atomically flat terraces
- Strain Engineering of Quantum Emitters in Hexagonal Boron Nitride
- Biaxial strain tuning of excitons in monolayer MoSe by high-temperature physical vapor deposition
- Enhanced Strain Transfer and Optoelectronic Performance in MoS2 Devices via Formvar Encapsulation
- Geometrical properties of strained and twisted moiré heterostructures
- Strain-Enabled Giant Second-Order Susceptibility in Monolayer WSe
- Ab-initio exploration of Gd monolayer interfaced with WSe: from electronic and magnetic properties to the anomalous Hall effect
- Mechanical Detuning of Exciton-Phonon Resonance in WS2
- Measurements of absolute bandgap deformation-potentials of optically-bright bilayer WSe
- Pressure induced evolution of anisotropic superconductivity and Fermi surface nesting in a ternary boride
- Strain Switching in van der Waals Heterostructures triggered by a Spin-Crossover Metal Organic Framework
- Transition Metal Dichalcogenide MoS: oxygen and fluorine functionalization for selective plasma processing
- Unconventional bright ground-state excitons in monolayer TiI from first-principles calculations
- Compact computer controlled biaxial tensile device for low-temperature transport measurements of layered materials