Superconductivity induced by electron doping in the system La1-xMxOBiS2 (M = Ti, Zr, Hf, Th)

Abstract

We report a strategy to induce superconductivity in the BiS${}_2$-based compound LaOBiS${}_2$. Instead of substituting F for O, we increase the charge-carrier density (electron dope) via substitution of tetravalent Th${}^{+4}$, Hf${}^{+4}$, Zr${}^{+4}$, and Ti${}^{+4}$ for trivalent La${}^{+3}$. It is found that both the LaOBiS${}_2$ and ThOBiS${}_2$ parent compounds are bad metals and that superconductivity is induced by electron doping with \emph{T${}_c$} values of up to 2.85 K. The superconducting and normal states were characterized by electrical resistivity, magnetic susceptibility, and heat capacity measurements. We also demonstrate that reducing the charge-carrier density (hole doping) via substitution of divalent Sr${}^{+2}$ for La${}^{+3}$ does not induce superconductivity.

7 pages, 13 figures

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