Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene

Abstract

Scattering mechanisms in graphene are critical to understanding the limits of signal-to-noise-ratios of unsuspended graphene devices. Here we present the four-probe low frequency noise (1/f) characteristics in back-gated single layer graphene (SLG) and bilayer graphene (BLG) samples. Contrary to the expected noise increase with the resistance, the noise for SLG decreases near the Dirac point, possibly due to the effects of the spatial charge inhomogeneity. For BLG, a similar noise reduction near the Dirac point is observed, but with a different gate dependence of its noise behavior. Some possible reasons for the different noise behavior between SLG and BLG are discussed.

28 pages, 3 figures + 3 supplement figures

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Cited by in corpus (25)

• Review of the Low-Frequency 1/f Noise in Graphene Devices
• Low-Frequency 1/f Noise in Molybdenum Disulfide Transistors
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• Reduction of 1/f Noise in Graphene after Electron-Beam Irradiation
• Impurities as a source of flicker noise in graphene
• Universal conductance fluctuations in Dirac materials in the presence of long-range disorder
• Observation of reduced 1/f noise in Graphene field effect transistors on Boron Nitride substrates
• Graphene Thickness-Graded Transistors with Reduced Low-Frequency 1/f Noise
• Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications
• Edge effect on resistance scaling rules in graphene nanostructures
• Non-Ergodicity & Microscopic Symmetry Breaking of the Conductance Fluctuations in Disordered Mesoscopic Graphene
• Effect of ambient on the resistance fluctuations of graphene
• Understanding the Bias Dependence of Low Frequency Noise in Sin-gle Layer Graphene FETs
• 1/f noise in graphene
• High performance sensors based on resistance fluctuations of single layer graphene transistors
• Effect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors
• Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs
• Anomalous behavior of 1/f noise in graphene near the charge neutrality point
• Effect of boron nitride defects and charge inhomogeneity on 1/f noise in encapsulated graphene
• Topological supersymmetry breaking: Definition and stochastic generalization of chaos and the limit of applicability of statistics
• Quantum Interference Noise Near the Dirac Point in Graphene
• Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs
• Origin of electrical noise near charge neutrality in dual gated graphene device
• Topological Field Theory and Stochastic Dynamics