4.4 kV $\beta$-Ga${}_2$O${}_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm${}^2$

Arkka Bhattacharyya, Shivam Sharma, Fikadu Alema +7

Field-plated (FP) depletion-mode MOVPE-grown $\beta$-Ga${}_2$O${}_3$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN${}_x$ dielectric…