Ahmed Ibreljic

collaborators

6 papers

cond-mat.mtrl-sci2025

Single-crystalline high-quality beta-Ga2O3 pseudo-substrate on sapphire through sputtering for epitaxial deposition

Guangying Wang, Shuwen Xie, William Brand +10

Solid-phase epitaxy (SPE) of beta-Ga2O3 thin films by radio-frequency (RF) sputtering and then crystallized through high-temperature post-deposition annealing is employed on sapphi…

physics.app-ph2025

Neutron-Assisted Breakdown Enhancement in $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes

Saleh Ahmed Khan, Sudipto Saha, Ahmed Ibreljic +6

This study demonstrates a substantial enhancement of breakdown voltage in $β$ -Ga $_{2}$ O $_{3}$ Schottky diodes through an approach that combines fast neutron irradiation with controlled…

physics.app-ph2025

Quasi-Vertical $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching

Saleh Ahmed Khan, Ahmed Ibreljic, A F M Anhar Uddin Bhuiyan

This work demonstrates quasi-vertical beta-Ga2O3 Schottky barrier diodes (SBDs) fabricated on c-plane sapphire using an all-LPCVD, plasma-free process integrating epitaxial growth…

physics.app-ph2025

LPCVD based Plasma Damage Free in situ etching of $β$ -Ga $_{2}$ O $_{3}$ using Solid Source Gallium

Saleh Ahmed Khan, Ahmed Ibreljic, A F M Anhar Uddin Bhuiyan

This work demonstrates a novel in situ etching technique for $β$ -Ga $_{2}$ O $_{3}$ using solid-source metallic Ga in a LPCVD system, enabling clean, anisotropic, plasma damage-free etchi…

cond-mat.mtrl-sci2025

LPCVD Grown Si-Doped $β$ -Ga $_{2}$ O $_{3}$ Films with Promising Electron Mobilities

Saleh Ahmed Khan, Ahmed Ibreljic, Stephen Margiotta +1

We systematically investigated the growth of Si-doped $β$ -Ga $_{2}$ O $_{3}$ films using LPCVD system, achieving high electron mobilities of 162 cm $^{2}$ /V.s and 149 cm $^{2}$ /V.s at carrier c…

cond-mat.supr-con2025

Thermal Annealing and Radiation Effects on Structural and Electrical Properties of NbN/GaN Superconductor/Semiconductor Junction

Stephen Margiotta, Binzhi Liu, Saleh Ahmed Khan +4

In the rapidly evolving field of quantum computing, niobium nitride (NbN) superconductors have emerged as integral components due to their unique structural properties, including a…

Single-crystalline high-quality beta-Ga2O3 pseudo-substrate on sapphire through sputtering for epitaxial deposition

Neutron-Assisted Breakdown Enhancement in β-Ga2​O3​ Schottky Diodes

Quasi-Vertical β-Ga2​O3​ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching

LPCVD based Plasma Damage Free in situ etching of β-Ga2​O3​ using Solid Source Gallium

LPCVD Grown Si-Doped β-Ga2​O3​ Films with Promising Electron Mobilities

Thermal Annealing and Radiation Effects on Structural and Electrical Properties of NbN/GaN Superconductor/Semiconductor Junction

Neutron-Assisted Breakdown Enhancement in $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes

Quasi-Vertical $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching

LPCVD based Plasma Damage Free in situ etching of $β$ -Ga $_{2}$ O $_{3}$ using Solid Source Gallium

LPCVD Grown Si-Doped $β$ -Ga $_{2}$ O $_{3}$ Films with Promising Electron Mobilities