Ahmed Ibreljic

most citedLPCVD Grown Si-Doped

β

-Ga

_{2}

_{3}

Films with Promising Electron Mobilities

20 citations · 35 across the 13 of their papers we have counts for

collaborators

14 papers

cond-mat.mtrl-sci2026

HVPE Homoepitaxy of $β$ -Ga $_{2}$ O $_{3}$ : High-Temperature Growth and Orientation-Dependent Surface Evolution

Sourav Sarker, Saleh Ahmed Khan, Ahmed Ibreljic +2

In this work, we systematically investigate homoepitaxial $β$ -Ga $_{2}$ O $_{3}$ growth by halide vapor phase epitaxy (HVPE) on (010), (001), and ( $2 ˉ$ 01) native substrates over a br…

cond-mat.mtrl-sci2026

Sn-Doping in LPCVD-Grown (010) $β$ -Ga $_{2}$ O $_{3}$ Films

Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker +1

In this work, Sn-doped (010) $β$ -Ga $_{2}$ O $_{3}$ homoepitaxial films were grown by low-pressure chemical vapor deposition (LPCVD), and the influence of Sn incorporation on their struct…

cond-mat.mtrl-sci2026

High-Mobility Ge-Doped $β$ -Ga $_{2}$ O $_{3}$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker +5

In this work, high-quality Ge-doped (-201) $β$ -Ga $_{2}$ O $_{3}$ thin films were heteroepitaxially grown on c-plane sapphire substrates with offcut angles of 0 deg, 2 deg, 6 deg, and 8 d…

cond-mat.mtrl-sci2026

High-Quality Ge-Doped (010) $β$ -Ga $_{2}$ O $_{3}$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker +3

In this work, Ge-doped $β$ -Ga $_{2}$ O $_{3}$ homoepitaxial films were grown on native (010) $β$ -Ga $_{2}$ O $_{3}$ substrates using low-pressure chemical vapor deposition (LPCVD). Controlled $n…

physics.app-ph2026

Vertical $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching

Saleh Ahmed Khan, Ahmed Ibreljic, Anhar Bhuiyan

A deep-etch field termination strategy using a Ga-assisted plasma-free etching technique in a low-pressure chemical vapor deposition (LPCVD) system is demonstrated for $β$ -Ga $_{2}$ O$…

physics.app-ph2026

Fast-Neutron Irradiation Effect in Heteroepitaxial $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker +2

In this work, we investigate the response of Ni/ $β$ -Ga $_{2}$ O $_{3}$ Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\times10^{15…

physics.app-ph2026

HVPE Growth of Si-Doped $β$ -Ga $_{2}$ O $_{3}$ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties

Sourav Sarker, Saleh Ahmed Khan, Ahmed Ibreljic +1

Si-doped $β$ -Ga $_{2}$ O $_{3}$ films were heteroepitaxially grown on sapphire substrates using HVPE. The influence of sapphire offcut on growth kinetics, surface morphology, crystalline…

cond-mat.mtrl-sci2025

Single-crystalline high-quality beta-Ga2O3 pseudo-substrate on sapphire through sputtering for epitaxial deposition

Guangying Wang, Shuwen Xie, William Brand +10

Solid-phase epitaxy (SPE) of beta-Ga2O3 thin films by radio-frequency (RF) sputtering and then crystallized through high-temperature post-deposition annealing is employed on sapphi…

physics.app-ph2025

High-Purity Diamond Integration on $β$ -Ga $_{2}$ O $_{3}$ via Microwave Plasma CVD for Enhanced Thermal Management

Saleh Ahmed Khan, Stephen Margiotta, Ahmed Ibreljic +1

The integration of diamond with $β$ -Ga $_{2}$ O $_{3}$ presents a promising pathway to enhance thermal management in high-power electronic devices, where the inherently low thermal conduc…

physics.app-ph2025

Neutron-Assisted Breakdown Enhancement in $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes

Saleh Ahmed Khan, Sudipto Saha, Ahmed Ibreljic +6

This study demonstrates a substantial enhancement of breakdown voltage in $β$ -Ga $_{2}$ O $_{3}$ Schottky diodes through an approach that combines fast neutron irradiation with controlled…

physics.app-ph2025★ 5 cited

Quasi-Vertical $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching

Saleh Ahmed Khan, Ahmed Ibreljic, A F M Anhar Uddin Bhuiyan

This work demonstrates quasi-vertical beta-Ga2O3 Schottky barrier diodes (SBDs) fabricated on c-plane sapphire using an all-LPCVD, plasma-free process integrating epitaxial growth…

physics.app-ph2025★ 9 cited

LPCVD based Plasma Damage Free in situ etching of $β$ -Ga $_{2}$ O $_{3}$ using Solid Source Gallium

Saleh Ahmed Khan, Ahmed Ibreljic, A F M Anhar Uddin Bhuiyan

This work demonstrates a novel in situ etching technique for $β$ -Ga $_{2}$ O $_{3}$ using solid-source metallic Ga in a LPCVD system, enabling clean, anisotropic, plasma damage-free etchi…

cond-mat.mtrl-sci2025★ 20 cited

LPCVD Grown Si-Doped $β$ -Ga $_{2}$ O $_{3}$ Films with Promising Electron Mobilities

Saleh Ahmed Khan, Ahmed Ibreljic, Stephen Margiotta +1

We systematically investigated the growth of Si-doped $β$ -Ga $_{2}$ O $_{3}$ films using LPCVD system, achieving high electron mobilities of 162 cm $^{2}$ /V.s and 149 cm $^{2}$ /V.s at carrier c…

cond-mat.supr-con2025★ 1 cited

Thermal Annealing and Radiation Effects on Structural and Electrical Properties of NbN/GaN Superconductor/Semiconductor Junction

Stephen Margiotta, Binzhi Liu, Saleh Ahmed Khan +4

In the rapidly evolving field of quantum computing, niobium nitride (NbN) superconductors have emerged as integral components due to their unique structural properties, including a…

HVPE Homoepitaxy of β-Ga2​O3​: High-Temperature Growth and Orientation-Dependent Surface Evolution

Sn-Doping in LPCVD-Grown (010) β-Ga2​O3​ Films

High-Mobility Ge-Doped β-Ga2​O3​ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

High-Quality Ge-Doped (010) β-Ga2​O3​ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Vertical β-Ga2​O3​ Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching

Fast-Neutron Irradiation Effect in Heteroepitaxial β-Ga2​O3​ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

HVPE Growth of Si-Doped β-Ga2​O3​ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties

Single-crystalline high-quality beta-Ga2O3 pseudo-substrate on sapphire through sputtering for epitaxial deposition

High-Purity Diamond Integration on β-Ga2​O3​ via Microwave Plasma CVD for Enhanced Thermal Management

Neutron-Assisted Breakdown Enhancement in β-Ga2​O3​ Schottky Diodes

Quasi-Vertical β-Ga2​O3​ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching

LPCVD based Plasma Damage Free in situ etching of β-Ga2​O3​ using Solid Source Gallium

LPCVD Grown Si-Doped β-Ga2​O3​ Films with Promising Electron Mobilities

Thermal Annealing and Radiation Effects on Structural and Electrical Properties of NbN/GaN Superconductor/Semiconductor Junction

HVPE Homoepitaxy of $β$ -Ga $_{2}$ O $_{3}$ : High-Temperature Growth and Orientation-Dependent Surface Evolution

Sn-Doping in LPCVD-Grown (010) $β$ -Ga $_{2}$ O $_{3}$ Films

High-Mobility Ge-Doped $β$ -Ga $_{2}$ O $_{3}$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

High-Quality Ge-Doped (010) $β$ -Ga $_{2}$ O $_{3}$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Vertical $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching

Fast-Neutron Irradiation Effect in Heteroepitaxial $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

HVPE Growth of Si-Doped $β$ -Ga $_{2}$ O $_{3}$ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties

High-Purity Diamond Integration on $β$ -Ga $_{2}$ O $_{3}$ via Microwave Plasma CVD for Enhanced Thermal Management

Neutron-Assisted Breakdown Enhancement in $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes

Quasi-Vertical $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching

LPCVD based Plasma Damage Free in situ etching of $β$ -Ga $_{2}$ O $_{3}$ using Solid Source Gallium

LPCVD Grown Si-Doped $β$ -Ga $_{2}$ O $_{3}$ Films with Promising Electron Mobilities