High-Mobility Ge-Doped $\beta$-Ga${}_2$O${}_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

Abstract

In this work, high-quality Ge-doped (-201) $\beta$-Ga${}_2$O${}_3$ thin films were heteroepitaxially grown on c-plane sapphire substrates with offcut angles of 0 deg, 2 deg, 6 deg, and 8 deg using low-pressure chemical vapor deposition (LPCVD). Increasing sapphire offcut promoted step-flow growth, resulting in improved terrace alignment, reduced surface roughness, and enhanced crystalline quality. Phase-pure monoclinic $\beta$-Ga${}_2$O${}_3$ with strong (-201) preferential orientation was confirmed by X-ray diffraction and Raman spectroscopy, while X-ray photoelectron spectroscopy revealed near-stoichiometric composition with an O/Ga ratio of 1.48. Electrical transport properties exhibited a strong dependence on substrate offcut angle, with room-temperature Hall mobility increasing from 15 to 117 cm${}^2$/V s as the offcut angle increased from 0 deg to 6 deg, across carrier concentrations spanning $1.43\times 10^{17}$ to $2.75\times 10^{18}$ cm${}^{-3}$. The 6 deg offcut sample achieved a room-temperature mobility of 117 cm${}^2$/V s at a carrier concentration of $1.43\times 10^{17}$ cm${}^{-3}$ and a peak low-temperature mobility of 337 cm${}^2$/V s at 128 K with a carrier concentration of $8.96\times 10^{16}$ cm${}^{-3}$, representing the highest reported room-temperature and low-temperature mobilities for Ge-doped $\beta$-Ga${}_2$O${}_3$ films grown on sapphire substrates. Carrier concentration and mobility data were analyzed using charge-neutrality and Boltzmann transport models incorporating donor activation together with polar optical phonon, ionized impurity, neutral impurity, acoustic deformation potential, and dislocation scattering mechanisms. The fitting revealed shallow donor activation energies of 12.5-19 meV, a deeper donor level at 80 meV, low acceptor compensation ($<5\times 10^{15}$ cm${}^{-3}$), and threading dislocation densities on the order of $10^9$ cm${}^{-2}$.