High-Mobility Ge-Doped $\beta$-Ga${}_2$O${}_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker +5

In this work, high-quality Ge-doped (-201) $\beta$-Ga${}_2$O${}_3$ thin films were heteroepitaxially grown on c-plane sapphire substrates with offcut angles of 0 deg, 2 deg, 6 deg, and 8 d…