Stephen Margiotta

most citedLPCVD Grown Si-Doped

β

-Ga

_{2}

_{3}

Films with Promising Electron Mobilities

20 citations · 21 across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.supr-con2026

Encapsulation epitaxy of air-stable monolayer superconducting films for quantum circuits and qubits

Xudong Zheng, Sameia Zaman, Kenan Zhang +22

Two-dimensional (2D) superconductors are an emerging platform for strongly correlated physics and quantum information science. Their reduced dimensionality, atomically flat interfa…

cond-mat.mtrl-sci2026

Investigation of GeSn aspect ratio trapping growth up to 8% Sn

Hryhorii Stanchu, Quang Minh Thai, Fernando M. de Oliveira +10

Aspect ratio trapping (ART) growth of germanium-tin (GeSn) is a promising approach to target important objectives on the quest towards commercialization of complementary metal-oxid…

physics.app-ph2026

Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection

Hryhorii Stanchu, Quang Minh Thai, Rajesh Kumar +16

As germanium-tin (GeSn) epitaxial growth quality continuously improves, the search for an efficient integration strategy of GeSn optoelectronics devices into complementary metal-ox…

cond-mat.mtrl-sci2026

High-Mobility Ge-Doped $β$ -Ga $_{2}$ O $_{3}$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker +5

In this work, high-quality Ge-doped (-201) $β$ -Ga $_{2}$ O $_{3}$ thin films were heteroepitaxially grown on c-plane sapphire substrates with offcut angles of 0 deg, 2 deg, 6 deg, and 8 d…

cond-mat.mtrl-sci2026

High-Quality Ge-Doped (010) $β$ -Ga $_{2}$ O $_{3}$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker +3

In this work, Ge-doped $β$ -Ga $_{2}$ O $_{3}$ homoepitaxial films were grown on native (010) $β$ -Ga $_{2}$ O $_{3}$ substrates using low-pressure chemical vapor deposition (LPCVD). Controlled $n…

physics.app-ph2026

Fast-Neutron Irradiation Effect in Heteroepitaxial $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker +2

In this work, we investigate the response of Ni/ $β$ -Ga $_{2}$ O $_{3}$ Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\times10^{15…

physics.app-ph2025

High-Purity Diamond Integration on $β$ -Ga $_{2}$ O $_{3}$ via Microwave Plasma CVD for Enhanced Thermal Management

Saleh Ahmed Khan, Stephen Margiotta, Ahmed Ibreljic +1

The integration of diamond with $β$ -Ga $_{2}$ O $_{3}$ presents a promising pathway to enhance thermal management in high-power electronic devices, where the inherently low thermal conduc…

physics.app-ph2025

Neutron-Assisted Breakdown Enhancement in $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes

Saleh Ahmed Khan, Sudipto Saha, Ahmed Ibreljic +6

This study demonstrates a substantial enhancement of breakdown voltage in $β$ -Ga $_{2}$ O $_{3}$ Schottky diodes through an approach that combines fast neutron irradiation with controlled…

cond-mat.mtrl-sci2025★ 20 cited

LPCVD Grown Si-Doped $β$ -Ga $_{2}$ O $_{3}$ Films with Promising Electron Mobilities

Saleh Ahmed Khan, Ahmed Ibreljic, Stephen Margiotta +1

We systematically investigated the growth of Si-doped $β$ -Ga $_{2}$ O $_{3}$ films using LPCVD system, achieving high electron mobilities of 162 cm $^{2}$ /V.s and 149 cm $^{2}$ /V.s at carrier c…

cond-mat.supr-con2025★ 1 cited

Thermal Annealing and Radiation Effects on Structural and Electrical Properties of NbN/GaN Superconductor/Semiconductor Junction

Stephen Margiotta, Binzhi Liu, Saleh Ahmed Khan +4

In the rapidly evolving field of quantum computing, niobium nitride (NbN) superconductors have emerged as integral components due to their unique structural properties, including a…

Encapsulation epitaxy of air-stable monolayer superconducting films for quantum circuits and qubits

Investigation of GeSn aspect ratio trapping growth up to 8% Sn

Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection

High-Mobility Ge-Doped β-Ga2​O3​ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

High-Quality Ge-Doped (010) β-Ga2​O3​ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Fast-Neutron Irradiation Effect in Heteroepitaxial β-Ga2​O3​ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

High-Purity Diamond Integration on β-Ga2​O3​ via Microwave Plasma CVD for Enhanced Thermal Management

Neutron-Assisted Breakdown Enhancement in β-Ga2​O3​ Schottky Diodes

LPCVD Grown Si-Doped β-Ga2​O3​ Films with Promising Electron Mobilities

Thermal Annealing and Radiation Effects on Structural and Electrical Properties of NbN/GaN Superconductor/Semiconductor Junction

High-Mobility Ge-Doped $β$ -Ga $_{2}$ O $_{3}$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

High-Quality Ge-Doped (010) $β$ -Ga $_{2}$ O $_{3}$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Fast-Neutron Irradiation Effect in Heteroepitaxial $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

High-Purity Diamond Integration on $β$ -Ga $_{2}$ O $_{3}$ via Microwave Plasma CVD for Enhanced Thermal Management

Neutron-Assisted Breakdown Enhancement in $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes

LPCVD Grown Si-Doped $β$ -Ga $_{2}$ O $_{3}$ Films with Promising Electron Mobilities