Stephen Lam

collaborators

2 papers

cond-mat.mtrl-sci2026

High-Mobility Ge-Doped $β$ -Ga $_{2}$ O $_{3}$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker +5

In this work, high-quality Ge-doped (-201) $β$ -Ga $_{2}$ O $_{3}$ thin films were heteroepitaxially grown on c-plane sapphire substrates with offcut angles of 0 deg, 2 deg, 6 deg, and 8 d…

cond-mat.mtrl-sci2026

High-Quality Ge-Doped (010) $β$ -Ga $_{2}$ O $_{3}$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker +3

In this work, Ge-doped $β$ -Ga $_{2}$ O $_{3}$ homoepitaxial films were grown on native (010) $β$ -Ga $_{2}$ O $_{3}$ substrates using low-pressure chemical vapor deposition (LPCVD). Controlled $n…

High-Mobility Ge-Doped β-Ga2​O3​ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

High-Quality Ge-Doped (010) β-Ga2​O3​ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

High-Mobility Ge-Doped $β$ -Ga $_{2}$ O $_{3}$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

High-Quality Ge-Doped (010) $β$ -Ga $_{2}$ O $_{3}$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics