Ahmed Ibreljic

most citedLPCVD Grown Si-Doped

β

-Ga

_{2}

_{3}

Films with Promising Electron Mobilities

20 citations · 35 across the 13 of their papers we have counts for

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cond-mat.mtrl-sci2026

HVPE Homoepitaxy of $β$ -Ga $_{2}$ O $_{3}$ : High-Temperature Growth and Orientation-Dependent Surface Evolution

Sourav Sarker, Saleh Ahmed Khan, Ahmed Ibreljic +2

In this work, we systematically investigate homoepitaxial $β$ -Ga $_{2}$ O $_{3}$ growth by halide vapor phase epitaxy (HVPE) on (010), (001), and ( $2 ˉ$ 01) native substrates over a br…

cond-mat.mtrl-sci2026

Sn-Doping in LPCVD-Grown (010) $β$ -Ga $_{2}$ O $_{3}$ Films

Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker +1

In this work, Sn-doped (010) $β$ -Ga $_{2}$ O $_{3}$ homoepitaxial films were grown by low-pressure chemical vapor deposition (LPCVD), and the influence of Sn incorporation on their struct…

cond-mat.mtrl-sci2026

High-Mobility Ge-Doped $β$ -Ga $_{2}$ O $_{3}$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker +5

In this work, high-quality Ge-doped (-201) $β$ -Ga $_{2}$ O $_{3}$ thin films were heteroepitaxially grown on c-plane sapphire substrates with offcut angles of 0 deg, 2 deg, 6 deg, and 8 d…

cond-mat.mtrl-sci2026

High-Quality Ge-Doped (010) $β$ -Ga $_{2}$ O $_{3}$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker +3

In this work, Ge-doped $β$ -Ga $_{2}$ O $_{3}$ homoepitaxial films were grown on native (010) $β$ -Ga $_{2}$ O $_{3}$ substrates using low-pressure chemical vapor deposition (LPCVD). Controlled $n…

cond-mat.mtrl-sci2025

Single-crystalline high-quality beta-Ga2O3 pseudo-substrate on sapphire through sputtering for epitaxial deposition

Guangying Wang, Shuwen Xie, William Brand +10

Solid-phase epitaxy (SPE) of beta-Ga2O3 thin films by radio-frequency (RF) sputtering and then crystallized through high-temperature post-deposition annealing is employed on sapphi…

cond-mat.mtrl-sci2025★ 20 cited

LPCVD Grown Si-Doped $β$ -Ga $_{2}$ O $_{3}$ Films with Promising Electron Mobilities

Saleh Ahmed Khan, Ahmed Ibreljic, Stephen Margiotta +1

We systematically investigated the growth of Si-doped $β$ -Ga $_{2}$ O $_{3}$ films using LPCVD system, achieving high electron mobilities of 162 cm $^{2}$ /V.s and 149 cm $^{2}$ /V.s at carrier c…

HVPE Homoepitaxy of β-Ga2​O3​: High-Temperature Growth and Orientation-Dependent Surface Evolution

Sn-Doping in LPCVD-Grown (010) β-Ga2​O3​ Films

High-Mobility Ge-Doped β-Ga2​O3​ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

High-Quality Ge-Doped (010) β-Ga2​O3​ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Single-crystalline high-quality beta-Ga2O3 pseudo-substrate on sapphire through sputtering for epitaxial deposition

LPCVD Grown Si-Doped β-Ga2​O3​ Films with Promising Electron Mobilities

HVPE Homoepitaxy of $β$ -Ga $_{2}$ O $_{3}$ : High-Temperature Growth and Orientation-Dependent Surface Evolution

Sn-Doping in LPCVD-Grown (010) $β$ -Ga $_{2}$ O $_{3}$ Films

High-Mobility Ge-Doped $β$ -Ga $_{2}$ O $_{3}$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

High-Quality Ge-Doped (010) $β$ -Ga $_{2}$ O $_{3}$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

LPCVD Grown Si-Doped $β$ -Ga $_{2}$ O $_{3}$ Films with Promising Electron Mobilities