Ahmed Ibreljic

most citedLPCVD based Plasma Damage Free in situ etching of

β

-Ga

_{2}

_{3}

using Solid Source Gallium

9 citations · 14 across the 11 of their papers we have counts for

collaborators

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7 papers · 1 filter

physics.app-ph2026

Vertical $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching

Saleh Ahmed Khan, Ahmed Ibreljic, Anhar Bhuiyan

A deep-etch field termination strategy using a Ga-assisted plasma-free etching technique in a low-pressure chemical vapor deposition (LPCVD) system is demonstrated for $β$ -Ga $_{2}$ O$…

physics.app-ph2026

Fast-Neutron Irradiation Effect in Heteroepitaxial $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker +2

In this work, we investigate the response of Ni/ $β$ -Ga $_{2}$ O $_{3}$ Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\times10^{15…

physics.app-ph2026

HVPE Growth of Si-Doped $β$ -Ga $_{2}$ O $_{3}$ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties

Sourav Sarker, Saleh Ahmed Khan, Ahmed Ibreljic +1

Si-doped $β$ -Ga $_{2}$ O $_{3}$ films were heteroepitaxially grown on sapphire substrates using HVPE. The influence of sapphire offcut on growth kinetics, surface morphology, crystalline…

physics.app-ph2025

High-Purity Diamond Integration on $β$ -Ga $_{2}$ O $_{3}$ via Microwave Plasma CVD for Enhanced Thermal Management

Saleh Ahmed Khan, Stephen Margiotta, Ahmed Ibreljic +1

The integration of diamond with $β$ -Ga $_{2}$ O $_{3}$ presents a promising pathway to enhance thermal management in high-power electronic devices, where the inherently low thermal conduc…

physics.app-ph2025

Neutron-Assisted Breakdown Enhancement in $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes

Saleh Ahmed Khan, Sudipto Saha, Ahmed Ibreljic +6

This study demonstrates a substantial enhancement of breakdown voltage in $β$ -Ga $_{2}$ O $_{3}$ Schottky diodes through an approach that combines fast neutron irradiation with controlled…

physics.app-ph2025★ 5 cited

Quasi-Vertical $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching

Saleh Ahmed Khan, Ahmed Ibreljic, A F M Anhar Uddin Bhuiyan

This work demonstrates quasi-vertical beta-Ga2O3 Schottky barrier diodes (SBDs) fabricated on c-plane sapphire using an all-LPCVD, plasma-free process integrating epitaxial growth…

Vertical β-Ga2​O3​ Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching

Fast-Neutron Irradiation Effect in Heteroepitaxial β-Ga2​O3​ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

HVPE Growth of Si-Doped β-Ga2​O3​ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties

High-Purity Diamond Integration on β-Ga2​O3​ via Microwave Plasma CVD for Enhanced Thermal Management

Neutron-Assisted Breakdown Enhancement in β-Ga2​O3​ Schottky Diodes

Quasi-Vertical β-Ga2​O3​ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching

Vertical $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching

Fast-Neutron Irradiation Effect in Heteroepitaxial $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

HVPE Growth of Si-Doped $β$ -Ga $_{2}$ O $_{3}$ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties

High-Purity Diamond Integration on $β$ -Ga $_{2}$ O $_{3}$ via Microwave Plasma CVD for Enhanced Thermal Management

Neutron-Assisted Breakdown Enhancement in $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes

Quasi-Vertical $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching